Three-state memory combining resistive and magnetic switching using tunnel junctions

Journal of Physics D: Applied Physics

Volumn 40, Issue 19, 2007, Pages 5819-5823

  Ventura, J ^a,b   Pereira, A M ^a,b   Araujo, J P ^a,b   Sousa, J B ^a,b   Zhang, Z ^a,c   Liu, Y ^a,c   Freitas, P P ^a,c  

^a IN   (Portugal)

^b UNIVERSITY OF PORTO   (Portugal)

^c INESC   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); ELECTROMIGRATION; MAGNETIC STORAGE; MAGNETORESISTANCE; SWITCHING NETWORKS; TUNNEL JUNCTIONS;

CURRENT INDUCED MAGNETIZATION SWITCHING (CIMS); CURRENT INDUCED SWITCHING (CIS); MAGNETIC SWITCHING; TUNNEL BARRIER;

RANDOM ACCESS STORAGE;

EID: 34748868091     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/19/003     Document Type: Article

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