Resistive switching in Al/graphene oxide/Al structure

Japanese Journal of Applied Physics

Volumn 50, Issue 7 PART 1, 2011, Pages

  Panin, Gennady N ^a,b   Kapitanova, Olesya O ^c   Lee, Sang Wuk ^a   Baranov, Andrey N ^c   Kang, Tae Won ^a  

^a Dongguk University   (South Korea)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; ELECTRICAL CHARACTERIZATION; ELECTRODIFFUSION; GRAPHITE ROD; OXIDE INTERFACES; OXIDE LAYER; PLANAR STRUCTURE; POTENTIAL BARRIERS; RESISTANCE CHANGE; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SPATIAL MODULATIONS; SWITCHING CHARACTERISTICS;

DISTILLATION; GRAPHENE; PHOTOLITHOGRAPHY; SWITCHING SYSTEMS;

SWITCHING;

EID: 79960668178     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.070110     Document Type: Article

References (25)

1. R. Waser and M. Aono: Nat. Mater. 6 (2007) 833.
2. D. Strukov, G. Snider, D. Stewart, and R. Williams: Nature 453 (2008) 80.
3. G. I. Meijer: Science 319 (2008) 1625.
4. A. Sawa: Mater. Today 11 [6] (2008) 28.
5. R. Waser, R. Dittmann, G. Staikov, and K. Szot: Adv. Mater. 21 (2009) 2632.
6. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov: Science 306 (2004) 666.
7. G. Eda, G. Fanchini, and M. Chhowalla: Nat. Nanotechnol. 3 (2008) 270.
8. K. A. Mkhoyan, A. W. Contryman, J. Silcox, D. A. Stewart, G. Eda, C. Mattevi, S. Miller, and M. Chhowalla: Nano Lett. 9 (2009) 1058.
9. C. Gomez-Navarro, R. T. Weitz, A. M. Bittner, M. Scolari, A. Mews, M. Burghard, and K. Kern: Nano Lett. 7 (2007) 3499.
10. G. Eda, Y.-Y. Lin, S. Miller, C.-W. Chen, W.-F. Su, and M. Chhowalla: Appl. Phys. Lett. 92 (2008) 233305.
11. H. A. Becerril, J. Mao, Z. Liu, R. M. Stoltenberg, Z. Bao, and Y. Chen: ACS Nano 2 (2008) 463.
12. J. Wu, H. A. Becerril, Z. Bao, Z. Liu, Y. Chen, and P. Peumans: Appl. Phys. Lett. 92 (2008) 263302.
13. B. C. Brodie: Philos. Trans. R. Soc. London 149 (1859) 249.
14. C. L. He, F. Zhuge, X. F. Zhou, M. Li, G. C. Zhou, Y. W. Liu, J. Z. Wang, B. Chen, W. J. Su, Z. P. Liu, Y. H. Wu, P. Cui, and R.-W. Li: Appl. Phys. Lett. 95 (2009) 232101.
15. H. Y. Jeong, J. Y. Kim, J. W. Kim, J. O. Hwang, J.-E. Kim, J. Y. Lee, T. H. Yoon, B. J. Cho, S. O. Kim, R. S. Ruoff, and S.-Y. Choi: Nano Lett. 10 (2010) 4381.
16. X.-D. Zhuang, Y. Chen, G. Liu, P.-P. Li, C.-X. Zhu, E.-T. Kang, K.-G. Noeh, B. Zhang, J.-H. Zhu, and Y.-X. Li: Adv. Mater. 22 (2010) 1731.
17. G. Liu, X. Zhuang, Y. Chen, B. Zhang, J. Zhu, C.-X. Zhu, K.-G. Neoh, and E.-T. Kang: Appl. Phys. Lett. 95 (2009) 253301.
18. W. Hummers and R. Offeman: J. Am. Chem. Soc. 80 (1958) 1339.
19. M. Hirata, T. Gotou, S. Horiuchi, M. Fujiwara, and M. Ohba: Carbon 42 (2004) 2929.
20. A. C. Ferrari and J. Robertson: Phys. Rev. B 61 (2000) 14095.
21. G. Panin, C. Daz-Guerra, and J. Piqueras: Appl. Phys. Lett. 72 (1998) 2129.
22. T. J. Echtermeyer, M. C. Lemme, M. Baus, B. N. Szafranek, A. K. Geim, and H. Kurz: arXiv:0712.2026v1.
23. T. J. Echtermeyer, M. C. Lemme, M. Baus, B. N. Szafranek, A. K. Geim, and H. Kurz: IEEE Electron Device Lett. 29 (2008) 952.
24. B. R. Goldsmith, J. G. Coroneus, V. R. Khalap, A. A. Kane, G. A. Weiss, and P. G. Collins: Science 315 (2007) 77.
25. C. Mattevi, G. Eda, S. Agnoli, S. Miller, K. A. Mkhoyan, O. Celik, D. Mastrogiovanni, G. Granozzi, E. Garfunkel, and M. Chhowalla: Adv. Funct. Mater. 19 (2009) 2577.