SCOPUS 정보 검색 플랫폼

Volumn 110, Issue 7, 2011, Pages

Improved ferroelectric property of very thin Mn-doped BiFeO3 films by an inlaid Al2O3 tunnel switch

(7) Ju Lee, Hyun a Hyuk Park, Min a Jin Kim, Yu a Seong Hwang, Cheol a Hwan Kim, Jeong b Funakubo, Hiroshi b Ishiwara, Hiroshi b

a Seoul National University (South Korea)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC HYSTERESIS; ATOMIC LAYER DEPOSITED; BI-LAYER; CHARGED DEFECTS; DEFECT COMPLEX; DOMAIN-WALL PINNING; FERROELECTRIC POLARIZATION; FERROELECTRIC PROPERTY; HIGH DENSITY; LOCAL FIELDS; MN-DOPED BIFEO; POLARIZATION SWITCHING; POLYCRYSTALLINE; SWITCHING SPEED;

ALUMINUM; BISMUTH; CAPACITORS; COMPLEXATION; FERROELECTRICITY; LEAKAGE (FLUID); MANGANESE; MANGANESE OXIDE; OXYGEN; OXYGEN VACANCIES; POLARIZATION; RELAXATION PROCESSES; SWITCHING; THIN FILMS;

FERROELECTRIC FILMS;

EID: 80054997794 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3647777 Document Type: Article

Times cited : (21)

References (46)

1
- 0003527147
- (Springet-Verlag, Berlin, Heidelberg)
- J. F. Scott, Ferroelectric Memories (Springet-Verlag, Berlin, Heidelberg, 2000).
- (2000) Ferroelectric Memories
- Scott, J.F.¹

2
- 79952403920
- 10.1002/adma.201004317
- A. Q. Jiang, C. Wang, K. J. Jin, X. B. Liu, J. F. Scott, C. S. Hwang, T. A. Tang, H. B. Lu, and G. Z. Yang, Adv. Mater. 23, 1277 (2011); 10.1002/adma.201004317
- (2011) Adv. Mater. , vol.23 , pp. 1277
- Jiang, A.Q.¹ Wang, C.² Jin, K.J.³ Liu, X.B.⁴ Scott, J.F.⁵ Hwang, C.S.⁶ Tang, T.A.⁷ Lu, H.B.⁸ Yang, G.Z.⁹

3
- 64249168806
- 10.1126/science.1168636
- T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin, and S. W. Cheong, Science 324, 63 (2009). 10.1126/science.1168636
- (2009) Science , vol.324 , pp. 63
- Choi, T.¹ Lee, S.² Choi, Y.J.³ Kiryukhin, V.⁴ Cheong, S.W.⁵

4
- 33746013199
- Tunneling across a ferroelectric
- DOI 10.1126/science.1126230
- E. Y. Tsymbal and H. Kohlstedt, Science 313, 181 (2006). 10.1126/science.1126230 (Pubitemid 44066239)
- (2006) Science , vol.313 , Issue.5784 , pp. 181-183
- Tsymbal, E.Y.¹ Kohlstedt, H.²

5
- 33746796522
- Ferroelectric field effect transistors
- edited by R. Waser (Wiley-VCH, Weinheim)
- H. Kohlstedt and H. Ishiwara, Ferroelectric field effect transistors., in Nanoelectronics and Information Technology edited by, R. Waser, (Wiley-VCH, Weinheim, 2003), pp. 386-405.
- (2003) Nanoelectronics and Information Technology , pp. 386-405
- Kohlstedt, H.¹ Ishiwara, H.²

6
- 40449116091
- Use of negative capacitance to provide voltage amplification for low power nanoscale devices
- DOI 10.1021/nl071804g
- S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008). 10.1021/nl071804g (Pubitemid 351345990)
- (2008) Nano Letters , vol.8 , Issue.2 , pp. 405-410
- Salahuddin, S.¹ Datta, S.²

7
- 80055003051
- G. A. Salvatore, D. Bouvet, and A. M. Ionescu, Tech. Dig.-Int. Electron. Devices Meet. 2008.
- (2008) Tech. Dig. - Int. Electron. Devices Meet.
- Salvatore, G.A.¹ Bouvet, D.² Ionescu, A.M.³

8
- 0036735424
- 3 thin films. I. Dopant, illumination, and bias dependence
- DOI 10.1063/1.1498966
- M. Grossman, O. Lohse, D. Bolten, U. Boettger, T. Schneller, and R. Waser, J. Appl. Phys. 92, 2680 (2002). 10.1063/1.1498966 (Pubitemid 35037879)
- (2002) Journal of Applied Physics , vol.92 , Issue.5 , pp. 2680
- Grossmann, M.¹ Lohse, O.² Bolten, D.³ Boettger, U.⁴ Schneller, T.⁵ Waser, R.⁶

9
- 0036640583
- 3 thin films with Pt or conducting oxide electrodes
- DOI 10.1063/1.1483105
- C. S. Hwang, J. Appl. Phys. 92, 432 (2002). 10.1063/1.1483105 (Pubitemid 34783334)
- (2002) Journal of Applied Physics , vol.92 , Issue.1 , pp. 432
- Hwang, C.S.¹

10
- 68149094487
- 10.1002/adma.200802924
- A. Q. Jiang, H. J. Lee, G. H. Kim, and C. S. Hwang, Adv. Mater. 21, 2870 (2009); 10.1002/adma.200802924
- (2009) Adv. Mater. , vol.21 , pp. 2870
- Jiang, A.Q.¹ Lee, H.J.² Kim, G.H.³ Hwang, C.S.⁴

11
- 69549086603
- 10.1103/PhysRevB.80.024119
- A. Q. Jiang, H. J. Lee, C. S. Hwang, and T.-A. Tang, Phys. Rev. B 80, 024119 (2009); 10.1103/PhysRevB.80.024119
- (2009) Phys. Rev. B , vol.80 , pp. 024119
- Jiang, A.Q.¹ Lee, H.J.² Hwang, C.S.³ Tang, T.-A.⁴

12
- 77956232495
- 10.1063/1.3435484
- H. J. Lee, G. H. Kim, M. H. Park, A.-Q. Jiang, and C. S. Hwang, Appl. Phys. Lett. 96, 212902 (2010). 10.1063/1.3435484
- (2010) Appl. Phys. Lett. , vol.96 , pp. 212902
- Lee, H.J.¹ Kim, G.H.² Park, M.H.³ Jiang, A.-Q.⁴ Hwang, C.S.⁵

13
- 33748871670
- Integration of lead zirconium titanate thin films for high density ferroelectric random access memory
- DOI 10.1063/1.2337361
- K. Kim and S. Lee, J. Appl. Phys. 100, 051604 (2006). 10.1063/1.2337361 (Pubitemid 44422007)
- (2006) Journal of Applied Physics , vol.100 , Issue.5 , pp. 051604
- Kim, K.¹ Lee, S.²

14
- 43149094004
- 10.3938/jkps.52.1109
- J. S. Lee, H. J. Lee, J. Y. Lee, S. H. Kang, I. W. Kim, C. W. Ahn, and G. S. Chung, J. Korean Phys. Soc. 52, 1109 (2008). 10.3938/jkps.52.1109
- (2008) J. Korean Phys. Soc. , vol.52 , pp. 1109
- Lee, J.S.¹ Lee, H.J.² Lee, J.Y.³ Kang, S.H.⁴ Kim, I.W.⁵ Ahn, C.W.⁶ Chung, G.S.⁷

15
- 77954210486
- 10.1063/1.3437637
- H. Zhang, S. Jiang, J. Xiao, and K. Kajiyoshi, J. Appl. Phys. 107, 124118 (2010). 10.1063/1.3437637
- (2010) J. Appl. Phys. , vol.107 , pp. 124118
- Zhang, H.¹ Jiang, S.² Xiao, J.³ Kajiyoshi, K.⁴

16
- 0037436499
- 3 multiferroic thin film heterostructures
- DOI 10.1126/science.1080615
- J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003). 10.1126/science. 1080615 (Pubitemid 36337195)
- (2003) Science , vol.299 , Issue.5613 , pp. 1719-1722
- Wang, J.¹ Neaton, J.B.² Zheng, H.³ Nagarajan, V.⁴ Ogale, S.B.⁵ Liu, B.⁶ Viehland, D.⁷ Vaithyanathan, V.⁸ Schlom, D.G.⁹ Waghmare, U.V.¹⁰ Spaldin, N.A.¹¹ Rabe, K.M.¹² Wuttig, M.¹³ Ramesh, R.¹⁴

17
- 33645151439
- 10.1016/j.ssc.2006.02.005
- G. L. Yuan, S. W. Or, Y. P. Wang, Z. G. Liu, and J. M. Liu, Solid State Commun. 138, 76 (2006). 10.1016/j.ssc.2006.02.005
- (2006) Solid State Commun. , vol.138 , pp. 76
- Yuan, G.L.¹ Or, S.W.² Wang, Y.P.³ Liu, Z.G.⁴ Liu, J.M.⁵

18
- 3142655788
- 10.1063/1.1764944
- J. Li, J. Wang, M. Wuttig, R. Ramesh, N. Wang, B. Ruette, A. P. Pyatakov, A. K. Zvezdin, and D. Viehland, Appl. Phys. Lett. 84, 5261 (2004). 10.1063/1.1764944
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5261
- Li, J.¹ Wang, J.² Wuttig, M.³ Ramesh, R.⁴ Wang, N.⁵ Ruette, B.⁶ Pyatakov, A.P.⁷ Zvezdin, A.K.⁸ Viehland, D.⁹

19
- 34249041295
- 3 thin films
- DOI 10.1016/j.apsusc.2007.02.060, PII S0169433207002644
- C.-C. Lee and J.-M. Wu, Appl. Surf. Sci. 253, 7069 (2007). 10.1016/j.apsusc.2007.02.060 (Pubitemid 46783113)
- (2007) Applied Surface Science , vol.253 , Issue.17 , pp. 7069-7073
- Lee, C.-C.¹ Wu, J.-M.²

20
- 44049109248
- 3 thin film
- DOI 10.1063/1.2918130
- G. D. Hu, S. H. Fan, C. H. Yang, and W. B. Wu, Appl. Phys. Lett. 92, 192905 (2008). 10.1063/1.2918130 (Pubitemid 351713472)
- (2008) Applied Physics Letters , vol.92 , Issue.19 , pp. 192905
- Hu, G.D.¹ Fan, S.H.² Yang, C.H.³ Wu, W.B.⁴

21
- 79957960720
- 3 thin films
- DOI 10.1063/1.1458695
- V. R. Palkar, J. John, and R. Pinto, Appl. Phys. Lett. 80, 1628 (2002). 10.1063/1.1458695 (Pubitemid 34268853)
- (2002) Applied Physics Letters , vol.80 , Issue.9 , pp. 1628
- Palkar, V.R.¹ John, J.² Pinto, R.³

22
- 33646936038
- 3 thin films fabricated by chemical solution deposition
- DOI 10.1143/JJAP.45.3194
- S. K. Singh and H. Ishiwara, Jpn. J. Appl. Lett. 45, 3194 (2006). 10.1143/JJAP.45.3194 (Pubitemid 43794168)
- (2006) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.45 , Issue.4 B , pp. 3194-3197
- Singh, S.K.¹ Ishiwara, H.²

23
- 33745625140
- 3 thin films deposited on Pt electrodes using chemical solution deposition
- DOI 10.1063/1.2218819
- S. K. Singh, H. Ishiwara, and K. Maruyama, Appl. Phys. Lett. 88, 262908 (2006). 10.1063/1.2218819 (Pubitemid 43992965)
- (2006) Applied Physics Letters , vol.88 , Issue.26 , pp. 262908
- Singh, S.K.¹ Ishiwara, H.² Maruyama, K.³

24
- 18744378644
- Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3
- DOI 10.1063/1.1862336, 062903
- X. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86, 062903 (2005). 10.1063/1.1862336 (Pubitemid 40665522)
- (2005) Applied Physics Letters , vol.86 , Issue.6 , pp. 1-3
- Qi, X.¹ Dho, J.² Tomov, R.³ Blamire, M.G.⁴ MacManus-Driscoll, J.L.⁵

25
- 33745196901
- 10.1063/1.2214138
- C.-F. Chung, J.-P. Lin, and J.-M. Wu, Appl. Phys. Lett. 88, 242909 (2006). 10.1063/1.2214138
- (2006) Appl. Phys. Lett. , vol.88 , pp. 242909
- Chung, C.-F.¹ Lin, J.-P.² Wu, J.-M.³

26
- 34250654715
- 3 thin films formed by chemical solution deposition
- DOI 10.1143/JJAP.45.L1087
- S. K. Singh, K. Sato, K. Maruyama, and H. Ishiwara, Jpn. J. Appl. Lett. 45, L1087 (2006). 10.1143/JJAP.45.L1087 (Pubitemid 47245065)
- (2006) Japanese Journal of Applied Physics, Part 2: Letters , vol.45 , Issue.37-41
- Singh, S.K.¹ Sato, K.² Maruyama, K.³ Ishiwara, H.⁴

27
- 70349488343
- 10.1063/1.3231073
- Z. Zhong and H. Ishiwara, Appl. Phys. Lett. 95, 112902 (2009). 10.1063/1.3231073
- (2009) Appl. Phys. Lett. , vol.95 , pp. 112902
- Zhong, Z.¹ Ishiwara, H.²

28
- 51349092844
- 10.1063/1.2969785
- X. H. Zhu, H. Béa, M. Bibes, S. Fusil, K. Bouzehouane, E. Jacquet, A. Barthélémy, D. Lebeugle, M. Viret, and D. Colson, Appl. Phys. Lett. 93, 082902 (2008). 10.1063/1.2969785
- (2008) Appl. Phys. Lett. , vol.93 , pp. 082902
- Zhu, X.H.¹ Béa, H.² Bibes, M.³ Fusil, S.⁴ Bouzehouane, K.⁵ Jacquet, E.⁶ Barthélémy, A.⁷ Lebeugle, D.⁸ Viret, M.⁹ Colson, D.¹⁰

29
- 34250688781
- (111)-textured Mn-substituted BiFe O3 thin films on SrRu O3 PtTiSi O2 Si structures
- DOI 10.1063/1.2748323
- S. K. Singh, N. Menou, H. Funakubo, K. Maruyama, and H. Ishiwara, Appl. Phys. Lett. 90, 242914 (2007). 10.1063/1.2748323 (Pubitemid 46934808)
- (2007) Applied Physics Letters , vol.90 , Issue.24 , pp. 242914
- Singh, S.K.¹ Menou, N.² Funakubo, H.³ Maruyama, K.⁴ Ishiwara, H.⁵

30
- 77952708667
- 10.1143/JJAP.48.09KB02
- J. H. Kim, H. Funakubo, Y. Sugiyama, and H. Ishiwara, Jpn. J. Appl. Phys. 48, 09KB02 (2009). 10.1143/JJAP.48.09KB02
- (2009) Jpn. J. Appl. Phys. , vol.48
- Kim, J.H.¹ Funakubo, H.² Sugiyama, Y.³ Ishiwara, H.⁴

31
- 77956232495
- 10.1063/1.3435484
- H. J. Lee, G. H. Kim, M. H. Park, A.-Q. Jiang, and C. S. Hwang, Appl. Phys. Lett. 96, 212902 (2010). 10.1063/1.3435484
- (2010) Appl. Phys. Lett. , vol.96 , pp. 212902
- Lee, H.J.¹ Kim, G.H.² Park, M.H.³ Jiang, A.-Q.⁴ Hwang, C.S.⁵

32
- 33745160011
- 10.1002/adma.v18:11
- J. Dho, X. Qi, H. Kim, J. L. MacManus-Driscoll, and M. G. Blamire, Adv. Mater. 18, 1445 (2008). 10.1002/adma.v18:11
- (2008) Adv. Mater. , vol.18 , pp. 1445
- Dho, J.¹ Qi, X.² Kim, H.³ MacManus-Driscoll, J.L.⁴ Blamire, M.G.⁵

33
- 33646170535
- 10.1063/1.2196477
- S. K. Singh, Y. K. Kim, H. Funakubo, and H. Ishiwara, Appl. Phys. Lett. 88, 162904 (2006). 10.1063/1.2196477
- (2006) Appl. Phys. Lett. , vol.88 , pp. 162904
- Singh, S.K.¹ Kim, Y.K.² Funakubo, H.³ Ishiwara, H.⁴

34
- 67650032659
- 10.1111/j.1551-2916.2009.03051.x
- S. Cui, G. Hu, W. Wu, C. Yang, L. Jiao, and Z. Wen, J. Am. Ceram. Soc. 92, 1610 (2009). 10.1111/j.1551-2916.2009.03051.x
- (2009) J. Am. Ceram. Soc. , vol.92 , pp. 1610
- Cui, S.¹ Hu, G.² Wu, W.³ Yang, C.⁴ Jiao, L.⁵ Wen, Z.⁶

35
- 36449003911
- 10.1063/1.359737
- J. J. Lee, C. L. Thio, and S. B. Desu, J. Appl. Phys. 78, 5073 (1995). 10.1063/1.359737
- (1995) J. Appl. Phys. , vol.78 , pp. 5073
- Lee, J.J.¹ Thio, C.L.² Desu, S.B.³

36
- 58149266702
- 10.1063/1.3021293
- L. Pintilie, I. Vrejoiu, D. Hesse, and M. Alexe, J. Appl. Phys. 104, 114101 (2008). 10.1063/1.3021293
- (2008) J. Appl. Phys. , vol.104 , pp. 114101
- Pintilie, L.¹ Vrejoiu, I.² Hesse, D.³ Alexe, M.⁴

37
- 0344309166
- 10.1143/JJAP.42.5941
- Y. Masuda and T. Nozaka, Jpn. J. Appl. Phys. 42, 5941 (2003). 10.1143/JJAP.42.5941
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 5941
- Masuda, Y.¹ Nozaka, T.²

38
- 0034138368
- 10.1007/s003390050041
- A. J. Hartmann, M. Neilson, R. N. Lamb, K. Watanabe, and J. F. Scott, Appl. Phys. A 70, 239 (2000). 10.1007/s003390050041
- (2000) Appl. Phys. A , vol.70 , pp. 239
- Hartmann, A.J.¹ Neilson, M.² Lamb, R.N.³ Watanabe, K.⁴ Scott, J.F.⁵

39
- 70450237089
- 10.1007/s00339-009-5366-0
- Z. Wen, G. Hu, C. Yang, and W. Wu, Appl. Phys. A 97, 937 (2009). 10.1007/s00339-009-5366-0
- (2009) Appl. Phys. A , vol.97 , pp. 937
- Wen, Z.¹ Hu, G.² Yang, C.³ Wu, W.⁴

40
- 33749822496
- 10.1021/ac50019a016
- N. S. McIntyre and D. G. Zetaruk, Anal. Chem. 49, 1521 (1977). 10.1021/ac50019a016
- (1977) Anal. Chem. , vol.49 , pp. 1521
- McIntyre, N.S.¹ Zetaruk, D.G.²

41
- 33750079570
- 10.1002/pssb.v243:12
- C. J. Cong and K. L. Zhang, Phys. Status Solidi B 243, 2764 (2006). 10.1002/pssb.v243:12
- (2006) Phys. Status Solidi B , vol.243 , pp. 2764
- Cong, C.J.¹ Zhang, K.L.²

42
- 0032760745
- 10.1016/S0039-6028(98)00668-2
- S. A. Chambers and Y. Liang, Surf. Sci. 420, 123 (1999). 10.1016/S0039-6028(98)00668-2
- (1999) Surf. Sci. , vol.420 , pp. 123
- Chambers, S.A.¹ Liang, Y.²

43
- 77956836339
- 10.1063/1.3481800
- S. R. S. Kumar, M. N. Hedhili, H. N. Alshareef, and S. Kasiviswanathan, Appl. Phys. Lett. 97, 111909 (2010). 10.1063/1.3481800
- (2010) Appl. Phys. Lett. , vol.97 , pp. 111909
- Kumar, S.R.S.¹ Hedhili, M.N.² Alshareef, H.N.³ Kasiviswanathan, S.⁴

44
- 75749108208
- 10.1063/1.3291044
- H. Yang, Y. Q. Wang, H. Wang, and Q. X. Jia, Appl. Phys. Lett. 96, 012909 (2010). 10.1063/1.3291044
- (2010) Appl. Phys. Lett. , vol.96 , pp. 012909
- Yang, H.¹ Wang, Y.Q.² Wang, H.³ Jia, Q.X.⁴

45
- 67649299251
- 10.1063/1.3065473
- Y. Wang, R. Y. Zheng, C. J. Sim, and J. Wang, J. Appl. Phys. 105, 016106 (2009). 10.1063/1.3065473
- (2009) J. Appl. Phys. , vol.105 , pp. 016106
- Wang, Y.¹ Zheng, R.Y.² Sim, C.J.³ Wang, J.⁴

46
- 36249019717
- 2/Pt thin-film capacitors
- DOI 10.1063/1.2815643
- A. Q. Jiang, Y. Y. Lin, and T. A. Tang, Appl. Phys. Lett. 91, 202906 (2007). 10.1063/1.2815643 (Pubitemid 350128929)
- (2007) Applied Physics Letters , vol.91 , Issue.20 , pp. 202906
- Jiang, A.Q.¹ Lin, Y.Y.² Tang, T.A.³

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