Modulated charged defects and conduction behaviour in doped BiFeO 3 thin films

Journal of Physics D: Applied Physics

Volumn 42, Issue 16, 2009, Pages

  Wang, Y ^a   Wang, J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; CO-DOPED; CONCENTRATION OF; DEFECT COMPLEX; DEFECTIVE STRUCTURES; LA DOPING; LEAKAGE MECHANISM; MG-DOPING; POOLE-FRENKEL EMISSION; SPACE CHARGE LIMITED CONDUCTION; TEMPERATURE-DEPENDENT CONDUCTIVITY;

ACTIVATION ENERGY; DIELECTRIC RELAXATION; DOPING (ADDITIVES); GRAIN BOUNDARIES; IRON OXIDES; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTING BISMUTH COMPOUNDS; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70149124047     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/16/162001     Document Type: Article

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