Tunable tunneling electroresistance in ferroelectric tunnel junctions by mechanical loads

ACS Nano

Volumn 5, Issue 3, 2011, Pages 1649-1656

  Luo, Xin ^a   Wang, Biao ^a   Zheng, Yue ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

conductance; ferroelectric tunneling junction; giant piezoelectric resistance; phase transition; strain

Indexed keywords

BARRIER THICKNESS; COMPRESSIVE STRAIN; CONDUCTANCE; ELECTRORESISTANCE; ELECTROSTATIC POTENTIALS; FERROELECTRIC TUNNEL JUNCTIONS; FERROELECTRIC TUNNELING JUNCTION; FIRST PRINCIPLE CALCULATIONS; GIANT PIEZOELECTRIC RESISTANCE; HIGH-SENSITIVITY; MECHANICAL LOADS; MECHANICAL SENSORS; MECHANICAL STRAIN; MULTIFUNCTIONAL DEVICES; NITROGEN-DOPING; NON-EQUILIBRIUM GREEN FUNCTIONS; TUNNEL BARRIER; TUNNELING CONDUCTANCE; TUNNELING JUNCTIONS; UNIT CELLS;

DENSITY FUNCTIONAL THEORY; ELECTROSTATICS; OXYGEN; OXYGEN VACANCIES; PHASE TRANSITIONS; PIEZOELECTRICITY; POLARIZATION; SCANNING TUNNELING MICROSCOPY; STRAIN; TUNNEL JUNCTIONS;

FERROELECTRICITY;

ARTICLE; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MECHANICAL STRESS; MICROELECTROMECHANICAL SYSTEM; SEMICONDUCTOR; THEORETICAL MODEL;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MICRO-ELECTRICAL-MECHANICAL SYSTEMS; MODELS, THEORETICAL; SEMICONDUCTORS; STRESS, MECHANICAL;

EID: 79952924705     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1031438     Document Type: Article

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