Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

Microelectronic Engineering

Volumn 99, Issue , 2012, Pages 50-57

  Soylu, M ^a   Al Ghamdi, A A ^b   Yakuphanoglu, F ^b,c  

^a BINGOL UNIVERSITY   (Turkey)

^b KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

^c FIRAT UNIVERSITY   (Turkey)

Author keywords

Al p GaAs barrier diode; Electrical properties; Illumination effect; Temperature effect

Indexed keywords

BARRIER DIODES; BARRIER HEIGHTS; BIAS DEPENDENCE; CAPACITANCE-VOLTAGE CHARACTERISTICS; CURRENT VOLTAGE; ELECTRICAL CHARACTERISTIC; FORWARD I-V MEASUREMENTS; I-V MEASUREMENTS; IDEALITY FACTORS; ILLUMINATION EFFECT; ILLUMINATION INTENSITY; INTERFACE CAPACITANCE; INTERFACE STATE DENSITY; PHOTOCAPACITANCE; RICHARDSON PLOT; TEMPERATURE CONDITIONS; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; ZERO-BIAS;

DIODES; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; THERMAL EFFECTS; THERMAL EVAPORATION;

ELECTRIC PROPERTIES;

EID: 84864828333     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.07.046     Document Type: Article

References (42)

1. S.M. Sze Physics of Semiconductor Device 2nd edn. 1981 John Wiley & Sons New York
2. E.H. Rhoderick, and R.H. Williams Metal-Semiconductor Contacts 2nd edn. 1988 Clarendon Press Oxford
3. A. Neamen Donald Semiconductor Physics and Devices 1992 Irwin Boston
4. J. Singh Semiconductor Devices, Basic Principles 2001 John Wiley & Sons New York
5. M.C. Petty, and M. Bryce An Introduction to Molecular Electronics 1995 Oxford University Press NewYork
6. C. Joachim, and M.A. Ratner Molecular Electronics 1997 American Chemical Society Washington D.C.
7. T. Tanaka, M. Tanaka, M. Itakura, T. Sadoh, and M. Miyao Thin Solid Films 518 2010 S170 S173
8. S. Hayashi, M. Nangu, T. Morikuni, S. Owa, and N.S. Takahashi J. Cryst. Growth 311 2009 842 846
9. J. Kobayashi, N. Ohashi, H. Sekiwa, I. Sakaguchi, M. Miyamoto, Y. Wada, Y. Adachi, K. Matsumoto, and H. Haneda J. Cryst. Growth 311 2009 4408 4413
10. S. Sommadossi, L. Litynska, P. Zieba, W. Gust, and E.J. Mittemeijer Mater. Chem. Phys. 81 2003 566 568
11. Z. Bao, A.J. Lovinger, and A. Dodabalapur Appl. Phys. Lett. 69 1996 3066
12. M. Ishii, and Y. Taga Appl. Phys. Lett. 80 2002 3430
13. C.W. Tang Appl. Phys. Lett. 48 1986 183
14. P. Peumans, and S.R. Forrest Appl. Phys. Lett. 79 2001 126
15. S. Heutz, P. Sullivan, B.M. Sanderson, S.M. Schultes, and T.S. Jones Sol. Energy Mater. Sol. Cells 83 2004 229
16. P. Peumans, V. Bulovic, and S.R. Forrest Appl. Phys. Lett. 76 2000 3855
17. A.A.M. Farag, A. Ashery, E.M.A. Ahmed, and M.A. Salem J. Alloys Comp. 495 2010 116
18. H. Uslu, S. Altindal, U. Aydemir, I. Dokme, and I.M. Afandiyeva J. Alloys Comp. 503 2010 96
19. G.B. Sakr, and I.S. Yahi J. Alloys Comp. 503 2010 213
20. K.C. Kao, and W. Hwang Electrical Transport in Solids with Particular Reference to Organic Semiconductors 1981 Pergamon Pres Ltd. Headington Hill Hall, Oxford, England
21. M.A. Lampert, and P. Mark Current Injection in Solids 1970 Academic Press New York, London
22. S. Chand, and J. Kumar J. Appl. Phys. 80 1 1996 288
23. J.H. Werner, and H.H. Güttler J. Appl. Phys. 69 3 1991 1522
24. C.T. Chuang Solid State Electron. 27 1984 299
25. R.V. Ghita, C. Logofatu, C. Negrila, A.S. Manea, M. Cernea, and M.F. Lazarescu J. Optoelectronics Adv. Materials 7 2005 3033
26. M. Soylu, and F. Yakuphanoglu J. Alloys Compd. 506 2010 418
27. F. Yakuphanoglu Solar Cells 91 2007 1182
28. S.K. Cheung, and N.W. Cheung Appl. Phys. Lett. 49 1986 85
29. A.A.M. Farag, I.S. Yahia, and M. Fadel Int. J. Hydrogen Energy 34 2009 4906
30. F. Yakuphanoglu J. Alloys Compd. 494 2010 451
31. B. Akkal, Z. Benamara, N.B. Bouiadjra, S. Tizi, and B. Gruzza Appl. Surf. Sci. 253 2006 1065
32. M.Y. Feteha, M. Soliman, N.G. Gomaa, and M. Ashry Renew. Energy 26 2002 113
33. R.K. Hanna, K. Ip, K.K. Allums, K. Baik, C.R. Abernathy, S.J. Pearton, Y.W. Heo, D.P. Norton, F. Ren, S. Shojan-Ardalan, and R. Wilkins J. Electron. Mater. 34 2005 395
34. V. Dyakonov, D. Godovsky, J. Meyer, J. Parisi, C.J. Brabec, N.S. Sariciftci, and J.C. Hummelen Synth. Met. 124 2001 103
35. A. Goswami, and A.P. Goswami Thin Solid Films 16 1973 175
36. E.H. Nicollian, and J.R. Brews MOS Physics and Technology 1982 Wiley New York
37. J.H. Werner, and H.H. Güttler J. Appl. Phys. 73 3 1993 1315
38. H.C. Card, and E.H. Rhoderick J. Phys. D: Appl. Phys. 4 1971 1589
39. P. Cova, A. Singh, A. Medina, and R.A. Masut Solid-State Electron. 42 1998 477
40. A.F. Ozdemir, A. Turut, and A. Kokçe Thin solid films 2003 210 215
41. S. Karatas, and A. Turut Physica B 381 2006 199 203
42. B. Akkal, Z. Benamara, A. Boudissa, N.B. Bouiadjra, M. Amrani, L. Bideux, and B. Gruzza Mater. Sci. Eng. B 55 1998 162