Studies of ohmic contact and schottky barriers on Au-Ge/GaAs and Au-Ti/GaAs

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 6, 2005, Pages 3033-3037

  Ghita, R V ^a   Logofatu, C ^a   Negrila, C ^a   Manea, A S ^a   Cernea, M ^a   Lazarescu, M F ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

GaAs (SI); Metal deposition; Ohmic contact; Schottky contact

Indexed keywords

BINARY ALLOYS; CHEMICAL CLEANING; ELECTRIC CONTACTORS; ETCHING; GALLIUM ARSENIDE; GOLD ALLOYS; HIGH ENERGY PHYSICS; III-V SEMICONDUCTORS; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SILICON WAFERS; SUBSTRATES; THERMAL EVAPORATION; VACUUM EVAPORATION; X RAY DETECTORS;

CARRIER TRANSPORT MECHANISMS; COMPOUND SEMICONDUCTORS; GAAS; HIGH SPEED DIGITAL CIRCUIT; ILLUMINATION CONDITIONS; METAL DEPOSITION; RAPID THERMAL ANNEALING (RTA); SCHOTTKY CONTACTS;

GOLD DEPOSITS;

EID: 29344462398     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. Masanori Murakami, Science and Technology of Advanced Materials 3, 1 (2002).
2. V. L. Rideout, Solid State Electron 18, 541 (1975).
3. J. B. Gunn, Solid State Communications 1, 88 (1963);
4. I. B. M. Journ. 8, 141 (1964).
5. R. Ludeke, G. Landgren, Physical Review B, 33(8), 5526 (1986).
6. J. R. Waldrop, Appl. Phys. Lett. 44(10), 1002 (1984).
7. J. Gyulai, J. W. Mayer, V. Rodriguez, A. Y. C. Yu, H. J. Gopen, J. Appl. Phys. 42, 3578 (1971).
8. T. Kim, D. D. L. Chung, J. Vac. Sci. Technol. B 4, 762 (1986).
9. P. Auvray, A. Guivarc'h, L'Haridon, J. P. Mercier, Thin Solid Films 127, 39 (1985).
10. L. Y. Zee, Z. A. Munir, J. Mater. Sci. 10, 1929 (1975).
11. W. Katz, G. Smith, O. Aina, B. J. Baliga, K. Rose, Appl. Surf. Sci. 9, 122 (1981).
12. T. Jung, E. Nebauer, phys. status solidi A 77, K203 (1983).
13. M. Procop, B. Sandow, phys. status solidi A 95, K211 (1986).
14. G. S. Marlow, M. B. Das, L. Tongson, Solid-State Electron. 26, 259 (1983).
15. A. A. Lakhani, R. C. Potter, D. M. Beyea, Semicond. Sci. Technol. 3, 605 (1988).
16. R. Bertin, S. D'Auria, C. Del Papa, F. Fiori, B. Lisowski, O'Shea, P. G. Pelfer, K. Smith, A. Zichichi, Nucl. Instr. and Meth. in Physics Research A 294, 211 (1990).
17. R. V. Ghita, D. Pantelica, M. F. Lazarescu, A. S. Manea, C. Logofatu, C. Negrila, V. Ciupina, Rom. J. Physics 50, No 7-8 (2005).
18. R. V. Ghita, C. Logofatu, C. Negrila, A. S. Manea, M. Cernea, V. Ciupina, M. F. Lazarescu, "6-th Balkan Workshop on Applied Physics July 5-7, 2005, Constanta, Romania" Proceedings Abstracts pp.79.