Electrical and photovoltaic properties of cobalt doped zinc oxide nanofiber/n-silicon diode

Journal of Alloys and Compounds

Volumn 494, Issue 1-2, 2010, Pages 451-455

  Yakuphanoglu, Fahrettin ^a  

^a FIRAT UNIVERSITY   (Turkey)

Author keywords

Heterojunctions; Semiconductors

Indexed keywords

CAPACITANCE VOLTAGE; CO-DOPED ZNO; CONDUCTANCE METHOD; CONTINUOUS DISTRIBUTION; CURRENT VOLTAGE; ILLUMINATION CONDITIONS; ILLUMINATION INTENSITY; INTERFACE STATE DENSITY; N TYPE SILICON; NANO-FIBER STRUCTURE; PHOTOCAPACITANCE; PHOTOVOLTAIC PROPERTY; ROOM TEMPERATURE; SILICON DIODES; SOL-GEL METHODS; STEADY-STATE PHOTOCONDUCTIVITY; TIME CONSTANTS; TRANSIENT CURRENT; VISIBLE LIGHT; ZNO;

COBALT; ELECTRIC FAULT CURRENTS; ELECTRIC PROPERTIES; HETEROJUNCTIONS; NANOFIBERS; OPEN CIRCUIT VOLTAGE; OXIDE FILMS; PHOTOCONDUCTIVITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; SENSORS; SOL-GEL PROCESS; SWITCHING CIRCUITS; ZINC; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77649190192     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.01.075     Document Type: Article

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