Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications

Journal of Alloys and Compounds

Volumn 503, Issue 1, 2010, Pages 213-219

  Sakr, G B ^a   Yahia, I S ^a  

^a Ain Shams University   (Egypt)

Author keywords

Capacitance frequency characteristics; Interface state; Light sensitive capacitor; Magnetic diode; P ZnTe n CdMnTe GaAs; Relaxation time

Indexed keywords

FREQUENCY CHARACTERISTIC; INTERFACE STATE; MAGNETIC DIODE; P-ZNTE/N-CDMNTE/GAAS;

CAPACITORS; DIELECTRIC RELAXATION; DIODES; HETEROJUNCTIONS; LIGHT SENSITIVE MATERIALS; MAGNETIC MATERIALS; OPTOELECTRONIC DEVICES; RELAXATION TIME;

CAPACITANCE;

EID: 77955303201     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.04.235     Document Type: Article

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