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Volumn 503, Issue 1, 2010, Pages 96-102
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The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/ω-V characteristics of Al-TiW-Pd 2Si/n-Si Schottky barrier diodes
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Author keywords
Al TiW Pd2Si n Si Schottky barrier diodes; Illumination effect; Interface states; Series resistance
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Indexed keywords
BARRIER HEIGHTS;
BIAS DEPENDENCE;
CAPACITANCE VOLTAGE;
CURRENT VOLTAGE;
DENSITY OF INTERFACE STATE;
DEPLETION LAYER;
DEPLETION REGION;
DISTRIBUTION PROFILES;
ELECTRICAL CHARACTERISTIC;
ELECTRICAL PARAMETER;
ELECTRON HOLE PAIRS;
FORWARD I-V MEASUREMENTS;
IDEALITY FACTORS;
ILLUMINATION CONDITIONS;
ILLUMINATION EFFECT;
ILLUMINATION INTENSITY;
INHOMOGENEITIES;
INTERFACE STATE;
INTERFACIAL LAYER;
NONIDEAL;
PARTICULAR DISTRIBUTION;
REVERSE BIAS;
ROOM TEMPERATURE;
SCHOTTKY STRUCTURES;
SERIES RESISTANCE;
SERIES RESISTANCES;
SURFACE PREPARATION;
TWO PARAMETER;
ZERO-BIAS;
ALUMINUM;
DIODES;
MOS CAPACITORS;
PALLADIUM;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SCHOTTKY BARRIER DIODES;
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EID: 77955303950
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2010.04.210 Document Type: Article |
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Times cited : (51)
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References (35)
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