Decomposition of on-current variability of nMOS FinFETs for prediction beyond 20 nm

IEEE Transactions on Electron Devices

Volumn 59, Issue 8, 2012, Pages 2003-2010

  Matsukawa, Takashi ^a   Liu, Yongxun ^a   O'Uchi, Shin Ichi ^a   Endo, Kazuhiko ^a   Tsukada, Junichi ^a   Yamauchi, Hiromi ^a   Ishikawa, Yuki ^a   Ota, Hiroyuki ^a   Migita, Shinji ^a   Morita, Yukinori ^a   Mizubayashi, Wataru ^a   Sakamoto, Kunihiro ^a   Masahara, Meishoku ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Fin shaped field effect transistor (FinFET); mobility; on current; parasitic resistance; scaling; transconductance; variability

Indexed keywords

FINFETS; GATE DIELECTRIC THICKNESS; LINEAR RELATIONSHIPS; MEASUREMENT-BASED; ON-CURRENTS; PARASITIC RESISTANCES; SCALING; VARIABILITY;

CARRIER MOBILITY; FINS (HEAT EXCHANGE); GATE DIELECTRICS; MOSFET DEVICES; TRANSCONDUCTANCE;

INTEGRATED CIRCUITS;

EID: 84864777100     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2196766     Document Type: Article

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