Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 97-98

  Tsunomura, T ^a   Kumar, A ^b   Mizutani, T ^b   Lee, C ^b   Nishida, A ^a   Takeuchi, K ^a   Inaba, S ^a   Kamohara, S ^a   Terada, K ^c   Hiramoto, T ^a,b   Mogami, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c HIROSHIMA CITY UNIVERSITY   (Japan)

Author keywords

Current onset; Current variability; Gm; VTH

Indexed keywords

CHANNEL POTENTIAL; CURRENT ONSET; CURRENT VARIABILITY; DECOMPOSITION METHODS; GM; INTRINSIC CHANNEL; MOSFETS; SATURATION REGION; VTH;

DECOMPOSITION;

DRAIN CURRENT;

EID: 77957862598     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556185     Document Type: Conference Paper

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