Accurate modeling and analysis of currents in trapezoidal FinFET devices

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2007, Pages 47-48

  Rao, R ^a   Bansal, A ^b   Kim, J ^a   Roy, K ^b   Chuang, C T ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43549096617     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2007.4357845     Document Type: Conference Paper

References (5)

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2. Lindert, N., et al, EDL, vol. 22, no. 5, pp. 487489, May 01.
3. Chen, Q., et. al, TED, vol. 50, no. 7, pp. 1631-1638, Jul. 03.
4. Wu, X., et al., TED, vol. 52, no. 1, pp. 63-68, Jan. 05.
5. Taurus Device Simulator, Synopsys, 04.