Fluctuation analysis of parasitic resistance in FinFETs with scaled fin thickness

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 407-409

  Matsukawa, Takashi ^a   Endo, Kazuhiko ^a   Ishikawa, Yuki ^a   Yamauchi, Hiromi ^a   O'uchi, Shinichi ^a   Liu, Yongxun ^a   Tsukada, Junichi ^a   Ishii, Kenichi ^a   Sakamoto, Kunihiro ^a   Suzuki, Eiichi ^a   Masahara, Meishoku ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Doping; Extension; FinFET; Fluctuation; Parasitic resistance; Source drain (S D)

Indexed keywords

DOPING; EXTENSION; FINFET; FLUCTUATION; PARASITIC RESISTANCE; SOURCE-DRAIN (S/D);

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS;

FINS (HEAT EXCHANGE);

EID: 67349143366     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2014180     Document Type: Article

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