Variability origins of parasitic resistance in finFETs with silicided source/drain

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 474-476

  Matsukawa, Takashi ^a   Liu, Yongxun ^a   Endo, Kazuhiko ^a   Tsukada, Junichi ^a   Ishikawa, Yuki ^a   Yamauchi, Hiromi ^a   O'Uchi, Shinichi ^a   Sakamoto, Kunihiro ^a   Masahara, Meishoku ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Fin shaped FET (FinFET); NiSi; parasitic resistance (R para); scaling; source drain (S D); variability

Indexed keywords

FIN-SHAPED FET (FINFET); NISI; PARASITIC RESISTANCES; SCALING; SOURCE/DRAIN (S/D); VARIABILITY;

INTEGRATED CIRCUITS; MESFET DEVICES; SILICIDES;

FINS (HEAT EXCHANGE);

EID: 84862816937     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2182755     Document Type: Article

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