Growth mechanism of catalyst-free and mask-free heteroepitaxial gan submicrometer- and micrometer-sized rods under biaxial strain: Variation of surface energy and adatom kinetics

Crystal Growth and Design

Volumn 12, Issue 8, 2012, Pages 3838-3844

  Ko, Suk Min ^a   Kim, Je Hyung ^a   Ko, Young Ho ^a   Chang, Yun Hee ^a   Kim, Yong Hyun ^a   Yoon, Jongmoon ^a   Lee, Jeong Yong ^a   Cho, Yong Hoon ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAINS; CATALYST-FREE; COMPRESSIVE STRAIN; FORMATION MECHANISM; GROWTH CONDITIONS; GROWTH MECHANISMS; HETEROEPITAXIAL; PRESSURE DEPENDENCIES; REACTOR PRESSURES; SI(111) SUBSTRATE; SIC SUBSTRATES; SUBMICROMETERS; V/III MOLAR RATIO; VERTICAL GROWTH;

ADATOMS; CATALYSTS; DENSITY FUNCTIONAL THEORY; EPITAXIAL GROWTH; GROWTH KINETICS; GROWTH RATE; INTERFACIAL ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROMETERS; RATE CONSTANTS; SILICON; SILICON CARBIDE; SMALL NUCLEAR REACTORS; SUBSTRATES; TENSILE STRAIN;

GALLIUM NITRIDE;

EID: 84864774468     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg300764f     Document Type: Article

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