Experimental study of plasmonically enhanced GaN nanowire light emitters

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 2, 2008, Pages 378-382

  Mastro, Michael A ^a   Freitas, Jaime A ^a   Twigg, Mark ^a   Holm, R T ^a   Eddy, Charles R ^a   Kub, Fritz ^a   Kim, Hong Yeol ^b   Ahn, Jaehui ^b   Kim, Jihyun ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC ENERGIES; ELECTROMAGNETIC SPECTRUMS; ENHANCED EMISSIONS; EXPERIMENTAL STUDIES; EXTERNAL-; FABRICATION TECHNIQUES; GAIN MEDIAS; GAN NANOWIRES; GROWTH CONDITIONS; LIGHT EMITTERS; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; NEAR-FIELD; SILVER COATINGS; THREADING DISLOCATIONS; ULTRA-VIOLET; VLS MECHANISMS;

CRYSTAL GROWTH; ELECTROMAGNETIC WAVES; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NITRIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SILVER;

WIRE;

EID: 54849430230     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723148     Document Type: Article

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