Density functional calculations of the strain effects on binding energies and adatom diffusion on (0 0 0 1) GaN surfaces

Materials Science and Engineering: B

Volumn 158, Issue 1-3, 2009, Pages 13-18

  Grandusky, J R ^a   Jindal, V ^a   Raynolds, J E ^a   Guha, S ^b   Shahedipour Sandvik, F ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b UNIVERSITY OF MISSOURI   (United States)

Author keywords

Epitaxy of thin films; Gallium nitride; Metalo organic chemical vapor deposition (MOCVD); Surface diffusion; Theory of diffusion

Indexed keywords

BINDING ENERGY; DENSITY FUNCTIONAL THEORY; DIFFUSION BARRIERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; TENSILE STRAIN;

ADATOM DIFFUSION; DENSITY-FUNCTIONAL CALCULATIONS; ENERGY DIFFUSION; EPITAXY OF THIN FILMS; GROWTH CONDITIONS; III-NITRIDE; METALO-ORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICAL VAPOR DEPOSITION; STRAIN EFFECT; THEORY OF DIFFUSION;

ADATOMS;

EID: 61649128745     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.12.042     Document Type: Article

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