Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires

Journal of Crystal Growth

Volumn 311, Issue 13, 2009, Pages 3409-3416

  Burke, Robert A ^a   Lamborn, Daniel R ^b   Weng, Xiaojun ^a   Redwing, Joan M ^a,b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

A2. Growth from vapor; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

A2. GROWTH FROM VAPOR; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B2. SEMICONDUCTING GALLIUM COMPOUNDS; DEEP LEVEL; FURNACE TEMPERATURES; GAN NANOWIRES; GASPHASE; GROUP III; GROWTH DIRECTIONS; INTERMEDIATE SPECIE; ISOTHERMAL TUBE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MODELING STUDIES; NANOWIRE GROWTH; NEAR BAND EDGE EMISSIONS; NICKEL THIN FILM; PHOTOLUMINESCENCE MEASUREMENTS; PROCESS CONDITION; PROCESS MODELING; REACTOR MODELING; SAPPHIRE SUBSTRATES; THIN-FILM DEPOSITIONS; TRIMETHYL GALLIUM; V/III RATIO; YELLOW LUMINESCENCE;

COMPUTATIONAL FLUID DYNAMICS; CORUNDUM; ELECTRIC WIRE; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; NICKEL ALLOYS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SULFUR COMPOUNDS; VAPOR DEPOSITION; VAPORS;

GALLIUM ALLOYS;

EID: 66649122554     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.050     Document Type: Article

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