Formation mechanisms of GaN nanorods grown on Si(1 1 1) substrates

Applied Surface Science

Volumn 254, Issue 21, 2008, Pages 7014-7017

  Kwon, Y H ^a   Lee, K H ^b   Ryu, S Y ^a   Kang, T W ^a   You, C H ^c   Kim, T W ^c  

^a Dongguk University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

Formation mechanism; GaN nanorods; Hydride vapor phase epitaxy; Microstructural properties

Indexed keywords

ELECTRON DIFFRACTION; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDRIDES; III-V SEMICONDUCTORS; NANORODS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

C AXIS ORIENTED; FORMATION MECHANISM; GAN NANORODS; HIGH-RESOLUTION TEM; HYDRIDE VAPOR PHASE EPITAXY; MICRO-STRUCTURAL PROPERTIES; SCANNING ELECTRON MICROSCOPY IMAGE; SELECTED AREA ELECTRON DIFFRACTION;

SILICON COMPOUNDS;

EID: 49549100234     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.096     Document Type: Article

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