Multilevel resistive switching in planar graphene/SiO 2 nanogap structures

ACS Nano

Volumn 6, Issue 5, 2012, Pages 4214-4221

  He, Congli ^a   Shi, Zhiwen ^a   Zhang, Lianchang ^a   Yang, Wei ^a   Yang, Rong ^a   Shi, Dongxia ^a   Zhang, Guangyu ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Electronic devices; Multilevel memory; Nanographene; Resistive switching

Indexed keywords

CONDUCTION STATE; DEVICE FABRICATIONS; ELECTRICAL BREAKDOWN; ELECTRICAL RESISTIVITY; ELECTRONIC DEVICE; FAST SWITCHING; LAYER THICKNESS; MULTILEVEL MEMORY; NANO-GAP; NANO-SIZED; NANOGRAPHENE; NON-VOLATILE MEMORIES; OXIDATION PROCESS; PLANAR GRAPHENE; REPRODUCIBILITIES; RESISTANCE SWITCHING EFFECT; RESISTIVE SWITCHING; RETENTION TIME; TWO-TERMINAL DEVICES;

ELECTRIC CONDUCTIVITY; GRAPHIC METHODS; SUBSTRATES;

SWITCHING SYSTEMS;

EID: 84864686865     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300735s     Document Type: Article

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