Synaptic behaviors of a single metal-oxide-metal resistive device

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 1019-1025

  Choi, Sang Jun ^a   Kim, Guk Bae ^b   Lee, Kyoobin ^b   Kim, Ki Hong ^c   Yang, Woo Young ^c   Cho, Soohaeng ^d   Bae, Hyung Jin ^a   Seo, Dong Seok ^a   Kim, Sang Il ^e   Lee, Kyung Jin ^e  

^a SAMSUNG Electronics   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Yonsei University Wonju   (South Korea)

^e Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE; ELECTRONIC VERSIONS; MAMMALIAN BRAIN; NON-VOLATILE; RESISTANCE LEVEL; SECOND ORDERS; STORAGE NODES; SYNAPTIC PLASTICITY; SYNAPTIC WEIGHT; TIME DEPENDENCE;

MAMMALS; METALS; VIRTUAL STORAGE; WEIGHT CONTROL;

NEURAL NETWORKS;

EID: 79959343819     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6282-7     Document Type: Article

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