Fowler-Nordheim tunneling in MOS capacitors with Si-implanted SiO2

Solid-State Electronics

Volumn 42, Issue 11, 1998, Pages 2105-2111

  Kameda, Etsumasa ^a   Matsuda, Toshihiro ^b   Emura, Yoshiko ^b   Ohzone, Takashi ^b  

^a TOYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; ELECTRON TUNNELING; HYSTERESIS; ION IMPLANTATION; SEMICONDUCTING SILICON; SILICA;

FOWLER-NORDHEIM TUNNELING;

MOS CAPACITORS;

EID: 0003571029     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00171-3     Document Type: Article

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