Effects of low temperature electronic cyclotron resonance hydrogen plasma treatment and annealing on the electrical properties of Ti and Ni contacts to 4H-SiC

Japanese Journal of Applied Physics

Volumn 51, Issue 8 PART 1, 2012, Pages

  Huang, Lingqin ^a   Zhu, Qiaozhi ^a   Gao, Mingchao ^a   Qin, Fuwen ^a   Wang, Dejun ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BARRIER HEIGHTS; CONDUCTION BAND EDGE; HYDROGEN PLASMA TREATMENTS; LOW TEMPERATURE ELECTRONICS; MICROWAVE HYDROGEN PLASMAS; NI CONTACTS; OHMIC BEHAVIOR; POST ANNEALING; RECTIFYING BEHAVIORS; SURFACE STATES DENSITY;

ANNEALING; CYCLOTRON RESONANCE; ELECTRIC CURRENTS; OHMIC CONTACTS; PHOTOELECTRONS; PLASMA APPLICATIONS; SILICON CARBIDE; TEMPERATURE; VOLTAGE DIVIDERS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC PROPERTIES;

EID: 84864644429     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.081302     Document Type: Article

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