Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation

Microelectronic Engineering

Volumn 88, Issue 5, 2011, Pages 553-556

  Cichoň, Stanislav ^a   MacHáč, Petr ^a   Barda, Bohumil ^a   Sofer, Zdeněk ^a  

^a INSTITUTE OF CHEMICAL TECHNOLOGY   (Czech Republic)

Author keywords

Ohmic contact; Silicon carbide; Surface; Treatment; XPS

Indexed keywords

ANNEALING TEMPERATURES; CLEANING METHODS; CONTACT MATERIAL; CONTACT PARAMETERS; DOPING LEVELS; ELECTRICAL PARAMETER; HIGH TEMPERATURE; OHMIC BEHAVIOR; SCHOTTKY BEHAVIORS; TREATMENT; WET CLEANING; XPS;

ANNEALING; CONTACTS (FLUID MECHANICS); ELECTRIC CONTACTORS; OHMIC CONTACTS; PLASMA ETCHING; SILICON CARBIDE; SURFACE CLEANING; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE TREATMENT;

EID: 79952484216     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.06.039     Document Type: Conference Paper

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