Cr/4H-SiC Schottky contacts investigated by electrical and photoelectron spectroscopy techniques

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 11, 2008, Pages 2536-2540

  Koliakoudakis, C ^a   Dontas, J ^b   Karakalos, S ^b   Kayambaki, M ^a   Ladas, S ^b   Konstantinidis, G ^a   Zekentes, K ^a   Kennou, S ^b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF PATRAS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; ELECTRICAL MEASUREMENTS; IDEALITY FACTORS; IN-SITU FORMATIONS; METAL-SEMICONDUCTOR INTERFACES; SCHOTTKY CONTACTS; THERMAL ANNEALING; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS MEASUREMENTS;

ANNEALING; ELECTRIC VARIABLES MEASUREMENT; ELECTRON SPECTROSCOPY; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SPECTRUM ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 55849112195     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200780212     Document Type: Conference Paper

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