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Physica B: Condensed Matter

Volumn 406, Issue 15-16, 2011, Pages 3030-3035

Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode

(3) Gupta, Sanjeev K a,b Azam, A b Akhtar, J a

a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE (India)

b ALIGARH MUSLIM UNIVERSITY (India)

Author keywords

4HSiC; Electrical parameters; Schottky diode; Vacuum annealing

Indexed keywords

4H-SIC SUBSTRATE; 4HSIC; BAND GAPS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; DENSITY OF INTERFACE STATE; DISCRETE ENERGY LEVELS; ELECTRICAL PARAMETER; GAS AMBIENTS; IDEALITY FACTORS; INTERFACE STATES DENSITY; MILD TEMPERATURES; MINORITY CARRIER GENERATION; REVERSE LEAKAGE CURRENT; REVERSE VOLTAGES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SIC(0 0 0 1); VACUUM ANNEALING;

ANNEALING; DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; VACUUM; VACUUM TECHNOLOGY;

SCHOTTKY BARRIER DIODES;

EID: 79957998861 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2011.05.001 Document Type: Article

Times cited : (37)

References (32)

1
- 0036541474
- Ranbir Singh, James A. Cooper, Michael R. Melloch, T.P. Chow, and John W. Palmour IEEE Trans. Electron. Devices 49 2002 665
- (2002) IEEE Trans. Electron. Devices , vol.49 , pp. 665
- Singh, R.¹ Cooper, J.A.² Melloch, M.R.³ Chow, T.P.⁴ Palmour, J.W.⁵

2
- 0030268828
- J.B. Casady, and R.W. Johnson Solid-State Electron. 39 1996 1409
- (1996) Solid-State Electron. , vol.39 , pp. 1409
- Casady, J.B.¹ Johnson, R.W.²

3
- 77949537350
- Sanjeev K. Gupta, A. Azam, and J. Akhtar Pramana - J. Phys. 74 2010 325
- (2010) Pramana - J. Phys. , vol.74 , pp. 325
- Gupta, S.K.¹ Azam, A.² Akhtar, J.³

4
- 77952594041
- Sanjeev K. Gupta, A. Azam, and J. Akhtar Microelectron. Int. 27 2010 106
- (2010) Microelectron. Int. , vol.27 , pp. 106
- Gupta, S.K.¹ Azam, A.² Akhtar, J.³

5
- 30844467098
- L. Chen, O.J. Guy, D. Doneddu, S.G.J. Batcup, S.P. Wilks, P.A. Mawby, T. Bouchet, and F. Torregrosa Microelectron. Reliab. 46 2006 637
- (2006) Microelectron. Reliab. , vol.46 , pp. 637
- Chen, L.¹ Guy, O.J.² Doneddu, D.³ Batcup, S.G.J.⁴ Wilks, S.P.⁵ Mawby, P.A.⁶ Bouchet, T.⁷ Torregrosa, F.⁸

6
- 0033704082
- David C. Sheridan, Guofu Niu, J.Neil Merrett, John D. Cressler, Charles Ellis, and Chin-Che Tin Solid-State Electron. 44 2000 1367
- (2000) Solid-State Electron. , vol.44 , pp. 1367
- Sheridan, D.C.¹ Niu, G.² Merrett J.Neil³ Cressler, J.D.⁴ Ellis, C.⁵ Tin, C.-C.⁶

7
- 33746189564
- A. Kumta, Rusli, Chin-Che Tin, and J. Ahn Microelectron. Reliab. 46 2006 1295
- (2006) Microelectron. Reliab. , vol.46 , pp. 1295
- Kumta, A.¹ Rusli² Tin, C.-C.³ Ahn, J.⁴

8
- 0035696702
- Marc C. Tarplee, Vipin P. Madangarli, Quinchun Zhang, and Tangali S. Sudarshan IEEE Trans. Electron. Devices 48 2001 2659
- (2001) IEEE Trans. Electron. Devices , vol.48 , pp. 2659
- Tarplee, M.C.¹ Madangarli, V.P.² Zhang, Q.³ Sudarshan, T.S.⁴

9
- 0035852244
- R. Weiss, L. Frey, and H. Ryssel Appl. Surf. Sci. 184 2001 413
- (2001) Appl. Surf. Sci. , vol.184 , pp. 413
- Weiss, R.¹ Frey, L.² Ryssel, H.³

10
- 0036508332
- Mariusz Sochackia, Jan Szmidta, Mietek Bakowskib, and Aleksander Werbowya Diamond Relat. Mater. 11 2002 1263
- (2002) Diamond Relat. Mater. , vol.11 , pp. 1263
- Sochackia, M.¹ Szmidta, J.² Bakowskib, M.³ Werbowya, A.⁴

11
- 33746742327
- O.J. Guy, D. Doneddu, L. Chen, M.R. Jennings, M.P. Ackland, R. Baylis, M.D. Holton, P. Dunstan, S.P. Wilks, and P.A. Mawby Diamond Relat. Mater. 15 2006 1472
- (2006) Diamond Relat. Mater. , vol.15 , pp. 1472
- Guy, O.J.¹ Doneddu, D.² Chen, L.³ Jennings, M.R.⁴ Ackland, M.P.⁵ Baylis, R.⁶ Holton, M.D.⁷ Dunstan, P.⁸ Wilks, S.P.⁹ Mawby, P.A.¹⁰

12
- 0035516926
- Q. Zhang, and T.S. Sudarshan J. Electron. Mater. 30 2001 1466
- (2001) J. Electron. Mater. , vol.30 , pp. 1466
- Zhang, Q.¹ Sudarshan, T.S.²

13
- 65649153395
- A.S. Potapov, P.A. Ivanov, and T.P. Samsonova Semiconductors 43 2009 612
- (2009) Semiconductors , vol.43 , pp. 612
- Potapov, A.S.¹ Ivanov, P.A.² Samsonova, T.P.³

14
- 0037502841
- K. Ip, S. Nigam, K.H. Baik, F. Ren, G.Y. Chung, B.P. Gila, and S.J. Pearton J. Electrochem. Soc. 150 2003 G293
- (2003) J. Electrochem. Soc. , vol.150 , pp. 293
- Ip, K.¹ Nigam, S.² Baik, K.H.³ Ren, F.⁴ Chung, G.Y.⁵ Gila, B.P.⁶ Pearton, S.J.⁷

15
- 39149133190
- A. Sefaoglu, S. Duman, S. Dogan, B. Gurbulak, S. Tuzemen, and A. Turut Microelectron. Eng. 85 2008 631
- (2008) Microelectron. Eng. , vol.85 , pp. 631
- Sefaoglu, A.¹ Duman, S.² Dogan, S.³ Gurbulak, B.⁴ Tuzemen, S.⁵ Turut, A.⁶

16
- 0035478596
- Q. Zhang, and T.S. Sudarshan Solid-State Electron. 45 2001 1847
- (2001) Solid-State Electron. , vol.45 , pp. 1847
- Zhang, Q.¹ Sudarshan, T.S.²

17
- 12344323963
- Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, and Bor-Wen Liou Solid-State Electron. 49 2005 437
- (2005) Solid-State Electron. , vol.49 , pp. 437
- Chang, S.-C.¹ Wang, S.-J.² Uang, K.-M.³ Liou, B.-W.⁴

18
- 28944432136
- S. Tumakha, D.J. Ewing, L.M. Porter, Q. Wahab, X. Ma, T.S. Sudharshan, and L.J. Brillson Appl. Phys. Lett. 87 2005 242106
- (2005) Appl. Phys. Lett. , vol.87 , pp. 242106
- Tumakha, S.¹ Ewing, D.J.² Porter, L.M.³ Wahab, Q.⁴ Ma, X.⁵ Sudharshan, T.S.⁶ Brillson, L.J.⁷

19
- 33745747235
- Jun Hu, Xiaobin Xin, Jian H. Zhao, Feng Yan, Bing Guan, John Seely, and Benjawan Kjornrattanawanich Opt. Lett. 31 2006 1591
- (2006) Opt. Lett. , vol.31 , pp. 1591
- Hu, J.¹ Xin, X.² Zhao, J.H.³ Yan, F.⁴ Guan, B.⁵ Seely, J.⁶ Kjornrattanawanich, B.⁷

20
- 0041930715
- F. Nava, G. Wagner, C. Lanzieri, P. Vanni, and E. Vittone Nucl. Instr. Methods Phys. Res. A 510 2003 273
- (2003) Nucl. Instr. Methods Phys. Res. A , vol.510 , pp. 273
- Nava, F.¹ Wagner, G.² Lanzieri, C.³ Vanni, P.⁴ Vittone, E.⁵

21
- 0004005306
- third ed. John Wiley & Sons, Inc. Hoboken, New Jersey
- S.M. Sze, and Kwok K. Ng Physics of Semiconductor Devices third ed. 2007 John Wiley & Sons, Inc. Hoboken, New Jersey
- (2007) Physics of Semiconductor Devices
- Sze, S.M.¹ Ng, K.K.²

22
- 0343982041
- S.K. Cheung, and N.W. Cheung Appl. Phys. Lett. 49 1986 85
- (1986) Appl. Phys. Lett. , vol.49 , pp. 85
- Cheung, S.K.¹ Cheung, N.W.²

23
- 0003546026
- Oxford University Press Oxford
- E.H. Rhoderick, and R.H. Williams Metal Semiconductor Contacts 1988 Oxford University Press Oxford
- (1988) Metal Semiconductor Contacts
- Rhoderick, E.H.¹ Williams, R.H.²

24
- 79958011708
- http://www.ioffe.rssi.ru/SVA/NSM/Semicond/SiC/bandstr.html

25
- 79958018516
- CEERI/MTG/2007/1.
- J. Akhtar, et al., Design and Fabrication of 4H-SiC Schottky Diode Detector, Technical report, CEERI/MTG/2007/1.
- Design and Fabrication of 4H-SiC Schottky Diode Detector, Technical Report
- Akhtar, J.¹

26
- 0036430524
- O. Schigiltchoff Mater. Sci. Forum 389-393 2002 921
- (2002) Mater. Sci. Forum , vol.389-393 , pp. 921
- Schigiltchoff, O.¹

27
- 36449000058
- J.H. Werner, and H.H. Gutter J. Appl. Phys. 69 1991 1522
- (1991) J. Appl. Phys. , vol.69 , pp. 1522
- Werner, J.H.¹ Gutter, H.H.²

28
- 79958018767
- S. Karata Microelectron. Eng. 87 2010 1935
- (2010) Microelectron. Eng. , vol.87 , pp. 1935
- Karata, S.¹

29
- 33751406554
- L.J. Brillson Surf. Sci. Rep. 2 1982 123
- (1982) Surf. Sci. Rep. , vol.2 , pp. 123
- Brillson, L.J.¹

30
- 0025067280
- P. Cova, and A. Singh Solid-State Electron. 33 1990 11
- (1990) Solid-State Electron. , vol.33 , pp. 11
- Cova, P.¹ Singh, A.²

31
- 14544290471
- S. Karata, S. Altndal, and M. Cakar Physica B 357 2005 386
- (2005) Physica B , vol.357 , pp. 386
- Karata, S.¹ Altndal, S.² Cakar, M.³

32
- 0011715992
- H.C. Card, and E.H. Rhoderick J. Phys. D: Appl. Phys. 4 1971 1589
- (1971) J. Phys. D: Appl. Phys. , vol.4 , pp. 1589
- Card, H.C.¹ Rhoderick, E.H.²

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