Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation

Applied Physics Letters

Volumn 88, Issue 24, 2006, Pages

  Seyller, Th ^a   Emtsev, K V ^a   Speck, F ^a   Gao, K Y ^a   Ley, L ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; GRAPHITE; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE;

ELECTRICAL BEHAVIOR; POSTDEPOSITION ANNEALS; SOLID STATE GRAPHITIZATION;

SCHOTTKY BARRIER DIODES;

EID: 33745197988     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2213928     Document Type: Article

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