Influence of hydrogen plasma treatment and post-annealing on defects in 4H-SiC

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 A, 2004, Pages 4114-4118

  Um, Myung Yoon ^a   Jeon, In Sang ^a   Eom, Da Il ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

4H SiC; DLTS; Hydrogen plasma treatment; Plasma induced defects

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; HYDROGEN; ION BOMBARDMENT; PASSIVATION; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS; TEMPERATURE CONTROL;

4H-SIC; HYDROGEN PASSIVATION; HYDROGEN PLASMA TREATMENT; PLASMA-INDUCED DEFECTS;

SILICON CARBIDE;

EID: 4644331988     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4114     Document Type: Article

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