Influence of H2 pre-treatment on Ni/4H-SiC Schottky diode properties

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1049-1052

  Yamamoto, Y ^a   Hatayama, T ^a   Yano, H ^a   Uraoka, Y ^a   Fuyuki, T ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Barrier height; H2 annealing; Schottky diodes; Threshold voltage

Indexed keywords

ANNEALING; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); OXIDATION; SILICON CARBIDE; SURFACE CLEANING; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

BARRIER HEIGHT; DENSITY VOLTAGE CHARACTERISTICS; THERMAL EVAPORATION; THERMAL OXIDIZATION;

SCHOTTKY BARRIER DIODES;

EID: 8744292090     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (7)

1. H. Tsuchida, I. Kamata and K. Izumi: Appl. Phys. Lett. Vol. 70 (1997), p. 3072.
2. H. Tsuchida, I. Kamata and K. Izumi: J. Appl. Phys. Vol. 85 (1999), p. 3569.
3. N. Sieber: Appl. Phys. Lett. Vol. 78 (2001), p. 1216.
4. Q. Wahab, E. B. Macak, J. Zhang, L. D. Madsen and E. Janzen: Mater. Sci. Forum Vol. 353-356 (2001), p. 691.
5. E. H. Rhoderick: Metal-semiconductor contacts (Clarendon Press, Oxford 1978).
6. V. V. Afanas'ev, M. Bassler, G. Pensl and M. J. Schulz: J. Appl. Phys. Vol. 79 (1996), p. 3108.
7. I. Shalish, C. E. M. de Oliveira, Y. Shapira, L. Burstein and M. Eizenberg: J. Appl. Phys. Vol. 88 (2000), p. 5724.