Improvements in the electrical performance of high voltage 4H-SiC Schottky diodes by hydrogen annealing

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 691-694

  Wahab, Q ^a   Macak E B ^a,b   Zhang, J ^a   Madsen, L D ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; HYDROGEN BONDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; VOLTAGE MEASUREMENT;

DANGLING BOND; ELECTRICAL PERFORMANCE; INTERFACE STATE DENSITY; METAL SEMICONDUCTOR INTERFACE; POWER DEVICES;

SCHOTTKY BARRIER DIODES;

EID: 14344278352     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.691     Document Type: Article

References (6)

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