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Physical Review Letters

Volumn 109, Issue 2, 2012, Pages

One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10)

(7) Sanduijav, B a Scopece, D b Matei, D a Chen, G a Schaffler F a Miglio, L b Springholz, G a

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b UNIVERSITY OF MILANO BICOCCA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

IN-SITU SCANNING TUNNELING MICROSCOPIES; MODEL SYSTEM; NANORIPPLES; SI-GE HETEROEPITAXY; THREE-DIMENSIONAL GROWTH; TOTAL ENERGY CALCULATION;

COALESCENCE; DOMES; EPITAXIAL GROWTH; FARM BUILDINGS; PHASE DIAGRAMS; SCANNING TUNNELING MICROSCOPY; SILICON; SILICON ALLOYS;

THREE DIMENSIONAL;

EID: 84863833812 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.109.025505 Document Type: Article

Times cited : (15)

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