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Volumn 82, Issue 12, 2010, Pages

Ripple-to-dome transition: The growth evolution of Ge on vicinal Si(1 1 10) surface

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EID: 77957748367     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.121309     Document Type: Article
Times cited : (18)

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    • It is assumed that vibrational and configurational entropy largely cancel when considering gain differences and hence can be neglected. See, for example, Ref..
    • It is assumed that vibrational and configurational entropy largely cancel when considering gain differences and hence can be neglected. See, for example, Ref..
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    • The position of each spot represents the local normal orientation relative to the centre, which corresponds to the (001) plane, while the intensity represents the relative amount of the surface with that orientation
    • The position of each spot represents the local normal orientation relative to the centre, which corresponds to the (001) plane, while the intensity represents the relative amount of the surface with that orientation.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.