Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1824-1827

  Nitta, T ^a   Ohno, Y ^a   Shimomura, S ^a   Hiyamizu, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

HIGH DENSITY CORRUGATIONS; OPTICAL QUALITY;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0035439880     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1398539     Document Type: Article

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