Theory and experiment of step bunching on misoriented GaAs(001) during metalorganic vapor-phase epitaxy

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Chua, A L S ^a   Pelucchi, E ^b   Rudra, A ^b   Dwir, B ^b   Kapon, E ^b   Zangwill, A ^c   Vvedensky, D D ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b EPFL   (Switzerland)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIFFUSION; DISSOCIATION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR DYNAMICS; SEMICONDUCTOR GROWTH;

ISLAND NUCLEATION; MISORIENTAION; MOLECULAR DISSOCIATION; STEP BUNCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 38049047944     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2832370     Document Type: Article

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