Epitaxial two dimensional aluminum films on silicon (111) by ultra-fast thermal deposition

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Levine, Igal ^a   Yoffe, Alexander ^a   Salomon, Adi ^a   Li, Wenjie ^a   Feldman, Yishay ^a   Vilan, Ayelet ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AL FILMS; ALUMINUM FILM; ALUMINUM THIN FILMS; DEPOSITION METHODS; DIFFUSION LENGTH; ETCH PITS; HIGH QUALITY; IN-PLANE ORIENTATION; LAYER-BY-LAYER GROWTH; NON EQUILIBRIUM; ONE-STEP PROCESS; ORDERED ARRAY OF HOLES; PHOSPHONIC ACIDS; PLASMONICS; RMS ROUGHNESS; ROUGH SURFACES; SI(111) SUBSTRATE; SILICON (111); SUBSTRATE TOPOGRAPHY; THERMAL DEPOSITION; TOP SURFACE; ULTRA-FAST;

ALUMINUM; ATOMIC LAYER DEPOSITION; MOLECULAR ELECTRONICS; MONOLAYERS; ORGANIC ACIDS; SILICON; SUBSTRATES; SURFACE TOPOGRAPHY; TWO DIMENSIONAL;

METALLIC FILMS;

EID: 84863523896     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4730411     Document Type: Article

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