Effect of metal-molecule contact roughness on electronic transport: Bacteriorhodopsin-based, metal-insulator-metal planar junctions

Langmuir

Volumn 24, Issue 10, 2008, Pages 5622-5626

  Jin, Yongdong ^a   Friedman, Noga ^a   Sheves, Mordechai ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL GEOMETRY; COMPUTER NETWORKS; ELECTROLYSIS; ELECTRONICS INDUSTRY; ERROR ANALYSIS; LEAD; METAL INSULATOR BOUNDARIES; METALLIZING; MICROELECTRONICS; MIM DEVICES; MOLECULAR ELECTRONICS; MOLECULAR STRUCTURE; NANOTECHNOLOGY; NUMERICAL ANALYSIS; PHOTOACOUSTIC EFFECT; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACE ROUGHNESS; TRANSPORT PROPERTIES;

(1 1 0) SURFACE; AMERICAN CHEMICAL SOCIETY (ACS); BACTERIORHODOPSIN (BR); BOTTOM ELECTRODES; CONTACT QUALITY; ELECTRONIC TRANSPORT PROPERTIES (ETP); ELECTRONIC TRANSPORTS; INTRINSIC PROPERTIES; METAL INSULATOR METAL (MIM); MODEL SYSTEMS; MOLECULAR JUNCTIONS; PLANAR JUNCTIONS; RECTIFYING BEHAVIORS;

MOLECULES;

BACTERIORHODOPSIN; METAL; SILICON DERIVATIVE; SILICON NITRIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; BIOPHYSICS; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRICITY; ELECTROCHEMISTRY; ELECTRODE; ELECTRON TRANSPORT; ELECTRONICS; METABOLISM; METHODOLOGY; PURPLE MEMBRANE; TIME; TRANSPORT AT THE CELLULAR LEVEL;

BACTERIORHODOPSINS; BIOLOGICAL TRANSPORT; BIOPHYSICS; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRODES; ELECTRON TRANSPORT; ELECTRONICS; ELECTROSTATICS; METALS; MICROSCOPY, ATOMIC FORCE; PURPLE MEMBRANE; SILICON COMPOUNDS; TIME FACTORS;

EID: 44649119339     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la703859a     Document Type: Article

References (48)

1. Reed, M. A.; Zhou, C.; Miller, C. J.; Burgin, T. P.; Tour, J. M. Science 1997, 278, 252,
2. Collier, C. P.; Wong, E. W.; Belohradsky, M.; Raymo, F. M.; Stoddard, J. F.; Kuekes, P. J.; Williams, R. S.; Heath, J. R. Science 1999, 285, 391.
3. Chen, Y.; Ohlberg, D. A. A.; Li, X.; Stewart, D. R.; Williams, R. S.; Jeppesen, J. O.; Nielsen, K. A.; Stoddard, J. F.; Olynick, D. L.; Anderson, E. Appl. Phys. Lett. 2003, 82, 1610.
4. Ratner, M. Nature 2000, 404, 137.
5. Hipps, K. W. Science 2001, 294, 536,
6. Zhirnov, V. V.; Cavin, R. K. Nat. Mater. 2006, 5, 11.
7. Metzger, R. M. Chem. Rec. 2004, 4, 291.
8. See, for example: Chabinyc, M. L.; Chen, X. X.; Holmlin, R. E.; Jacobs, H.; Skulason, H.; Frisbie, C. D.; Mujica, V.; Ratner, M. A.; Rampi, M. A.: Whitesides, G. M. J. Am. Chem. Soc. 2002, 124, 11730.
9. Elbing, M.; Ochs, R.; Koentopp, M.; Fischer, M.; von Hanisch, C.: Weigend, F.; Evers, F.; Weber, H. B.; Mayor, M. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 8815.
10. Dhirani, A.;Lin, P. H.; Guyot-Sionnest, P.; Zehner, R.; Sita, L. S. J. Chem. Phys. 1997, 106, 5249.
11. Zhou, C.; Deshpande, M. R.; Reed, M. A.; Jones, L.; Tour, J. M. Appl. Phys. Lett. 1997, 71, 611.
12. Kergueris, C.; Bourgoin, J.-P.; Palacin, S.; Esteve, D.; Urbina, C.; Magoga, M.; Joachim, C. Phys. Rev. B 1999, 59, 12505.
13. Ottaviano, L.; Santucci, S.; Di Nardo, S.; Lozzi, L.; Passacantando, M.; Picozzi, P. J. Vac. Sci. Technol. 1997, A15, 1014.
14. Pomerantz, M.; Aviram, A.; McCorkle, R. A.; Li, L.; Schrott, A. G. Science 1992, 255, 1115.
15. Taylor, J.; Brandbyge, M.; Stokbro, K. Phys. Rev. Lett. 2002, 89, 138301-1.
16. Reichert, J.; Ochs, R.; Beckmann, D.; Weber, H. B.; Mayor, M.; Löhneysen, H. v. Phys. Rev. Lett. 2002, 88, 176804-1.
17. Datta, S.; Tian, W.; Hong, S.; Reifenberger, R.; Henderson, J. L; Kubiak, C. P. Phys. Rev. Lett. 1997, 79, 2530.
18. Rushmerick, J. G. Mater. Today 2005, July/August, 26.
19. Weiss, E. A.; Chiechi, R. C.; Kaufman, G. K.; Kriebel, J. K.; Li, Z. F.; Duati, M.; Rampi, M. A.; Whitesides, G. M. J. Am. Chem. Soc. 2007, 129, 4336.
20. Jin, Y. D.; Cahen, D.; Friedman, N.; Sheves, M. Angew. Chem., Int. Ed. 2006, 45, 6325.
21. McCreery, R.; Dieringer, J.; Solak, A. O.; Snyder, B.; Nowak, A. M.; McGovern, W. R.; DuVall, S. J. Am. Chem. Soc. 2004, 126, 6200.
22. Stewart, D. R.; Ohlberg, D. A. A.; Beck, P. A.; Chen, Y.; Williams, R. S.; Jeppesen, J. O.; Nielsen, K. A.; Stoddart, J. F. Nano Lett. 2004, 4, 133.
23. Rushmerick, J. G.; Holt, D. B.; Yang, J. C.; Naciri, J.; Moore, M. H.; Shashidhar, R. Phys. Rev. Lett. 2002, 89, 086802.
24. Vuillaume, D.; Lenfant, S. Microelectron. Eng. 2003, 70, 539.
25. Salomon, A.; Boecking, T.; Seitz, O.; Markus, T.; Amy, F.; Chan, C.; Zhao, W.; Cahen, D.; Kahn, A. Adv. Mater. 2007, 19, 445.
26. Nesher, G.; Vilan, A.; Cohen, H.; Cahen, D.; Amy, F.; Chan, C.; Hwang, J.; Kahn, A. J. Phys. Chem. B 2006, 110, 14363.
27. Segev, L.; Salomon, A.; Natan, A.; Cahen, D.; Kronik, L.; Amy, F.; Chan, C. R.; Kahn, A. Phys. Rev. B 2006, 74, 165323.
28. Rogut, L.; Komvopoulos, K. J. Appl. Phys. 2004, 95, 576.
29. Oesterhelt, D.; Stoeckenius, W. Methods Enzymol 1974, 31, 667.
30. Racker, E. Biochem. Biophys. Res. Commun. 1973, 55, 224.
31. Jin, Y. D.; Kang, X. F.; Song, Y. H.; Zhang, B. L.; Cheng, G. J.; Dong, S. J. Anal. Chem. 2001, 73, 2843.
32. Vilan, A.; Shanzer, A.; Cahen, D. Nature 2000, 404, 166.
33. Jin, Y. D.; Friedman, N.; Sheves, M.; He, T.; Cahen, D. Proc. Natl Acad. Sci. U.S.A. 2006, 103, 8601.
34. Jin, Y. D.; Friedman, N.; Sheves, M.; Cahen, D. Adv. Funct. Mater. 2007, 17, 1417.
35. The APTMS monolayer is homogeneous since there is no big polymer island formation and no pronounced difference in rms surface roughness of the substrate before and after silanization.
36. Often transient behavior of I- V characteristics is confused with nonlinear characteristics, as shown in: Ma, Y. F.; Seminario, J. M. J. Phys. Chem. B 2006, 110, 9708.
37. Simmons, J. G. J. Appl. Phys. 1963, 34, 2581.
38. Ho, G.; Heath, J. R.; Kondratenko, M.; Perepichka, D. F.; Arseneault, K.; Pézolet, M.; Bryce, M. R. Chem.-Eur. J. 2005, 11, 2914.
39. Vilan, A.; Cahen, D. Adv. Funct. Mater. 2002, 12, 795.
40. (a) Selzer, Y.; Cahen, D. Adv. Mater. 2001, 13, 508.
41. (b) Haick, H.; Ambrico, M.; Ligonzo, T.; Tung, R. T.; Cahen, D. J. Am. Chem. Soc. 2006, 128, 6854.
42. Jin, Y. D.; Friedman, N. J. Am. Chem. Soc. 2005, 127, 11902.
43. Yan, L. M.; Seminario, J. M. Int. J. Quantum Chem. 2007, 107, 440.
44. Seminario, J. M.; Ma, Y. F.; Agapito, L. A.; Yan, L. M.; Araujo, R. A.; Bingi, S.; Vadlamani, N. S.; Chagarlamudi, K.; Sudarshan, T. S.; Myrick, M. L.; Colavita, P. E.; Franzon, P. D.; Nackashi, D. P.; Cheng, L.; Yao, Y. X.; Tour, J. M. J. Nanosci. Nanotechnol 2004, 4, 907.
45. Muller, D. J.; Heymann, J. B.; Oesterhelt, F.; Moller, C.; Gaub, H.; Buldt, G.; Engel, A. Biochim. Biophys. Acta 2000, 1460, 27.
46. To further check if the observed rectifying behavior can be related to the roughness of the Al electrode, we looked at an extreme change in electrode/ sample contact. An Al(1)/insulator/Au junction was measured and then the mechanical contact between the bottom Al electrode and the electrode clip, connected to the outside world, was adjusted slightly. Starting from an almost symmetric curve, we carefully decreased the mechanical contact pressure to get a "poor" electrical contact and observed rectifying behavior, similar to what was seen in Figure 2b, but with (at -1V) nearly 3 orders of magnitude lower current than that see in Figure 2b (data not shown).
47. Brinkman, W. F.; Dynes, R. C.; Rowell, J. M. J. Appl Phys. 1970, 41, 1915.
48. Chan, H. C.; Mathews, V.; Fazan, P. C. IEEE Electron Device Lett. 1991, 12, 468.