Morphology and resistivity of Al thin films grown on Si (1 1 1) by molecular beam epitaxy

Vacuum

Volumn 79, Issue 3-4, 2005, Pages 178-185

  Joshi, Niraj ^a   Debnath, A K ^a   Aswal, D K ^a   Muthe, K P ^a   Kumar, M Senthil ^b   Gupta, S K ^a   Yakhmi, J V ^a  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

AFM; Al thin films; Metal to insulator transition; Molecular beam epitaxy; XPS

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; COALESCENCE; ELECTRIC CONDUCTIVITY; FILM GROWTH; GRAIN SIZE AND SHAPE; METAL INSULATOR TRANSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

AL THIN FILMS; CHARGE TRANSPORT; TEMPERATURE DEPENDENCE; VARIABLE RANGE HOPPING (VHR);

THIN FILMS;

EID: 22544433201     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.03.007     Document Type: Article

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