Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy

Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

  Zhang, Qin ^a,b   Zhou, Guangle ^b   Xing, Huili G ^b   Seabaugh, Alan C ^b   Xu, Kun ^a,c   Sio, Hong ^d   Kirillov, Oleg A ^a   Richter, Curt A ^a   Nguyen, N V ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c PURDUE UNIVERSITY   (United States)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRON ENERGY BAND; ENERGY-BAND DIAGRAM; FLAT BAND; INAS/INP; INP; INTERFACE CHARGE; INTERNAL PHOTOEMISSION SPECTROSCOPIES; METAL OXIDE SEMICONDUCTOR; POSITIVE CHARGES;

ALIGNMENT; BAND STRUCTURE; FIELD EFFECT TRANSISTORS; PHOTOELECTRON SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 84863385490     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3692589     Document Type: Article

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