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Volumn 519, Issue 9, 2011, Pages 2811-2816

Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry

(3) Nguyen, N V a Kirillov, O A a Suehle, J S a

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

Band alignment; Band offsets; High k dielectric; Interface; Internal photoemission; Metal gate; MOS; Spectroscopic ellipsometry

Indexed keywords

BAND ALIGNMENTS; BAND OFFSETS; HIGH-K DIELECTRIC; INTERFACE; INTERNAL PHOTOEMISSION; METAL GATE; MOS;

ALIGNMENT; DIELECTRIC DEVICES; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; HAFNIUM COMPOUNDS; METALS; PHOTOEMISSION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY;

MOS DEVICES;

EID: 79952630454 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.11.080 Document Type: Article

Times cited : (16)

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