Experimental staggered-source and N+ pocket-doped channel III-V tunnel field-effect transistors and their scalabilities

Applied Physics Express

Volumn 4, Issue 2, 2011, Pages

  Mohata, Dheeraj ^a   Mookerjea, Saurabh ^a   Agrawal, Ashish ^a   Li, Yuanyuan ^a   Mayer, Theresa ^a   Narayanan, Vijaykrishnan ^a   Liu, Amy ^b   Loubychev, Dmitri ^b   Fastenau, Joel ^b   Datta, Suman ^a  

^a The Pennsylvania State University   (United States)

^b IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL SIDE; DOPED CHANNELS; DOUBLE GATE; DRIVE CURRENTS; GAAS; GEOMETRICAL SCALING; HOMOJUNCTION; LATTICE-MATCHED; N-CHANNEL; NUMERICAL SIMULATION; THIN BODY;

GALLIUM; HETEROJUNCTIONS; SCALABILITY; TUNNEL JUNCTIONS;

FIELD EFFECT TRANSISTORS;

EID: 79951619845     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.024105     Document Type: Article

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