Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 621-623

  Agarwal, Samarth ^a   Klimeck, Gerhard ^a   Luisier, Mathieu ^a  

^a Purdue University   (United States)

Author keywords

Band to band tunneling transistors; Full band and atomistic quantum transport; Steep subthreshold

Indexed keywords

BAND TO BAND TUNNELING; BAND-TO-BAND TUNNELING TRANSISTORS; FULL BAND; QUANTUM TRANSPORT; SUBTHRESHOLD;

QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 77953025358     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2046011     Document Type: Article

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