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Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

Band offsets of Al2O3 / InxGa 1-xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

(7) Nguyen, N V a Xu, M b Kirillov, O A a Ye, P D b Wang, C b,c Cheung, K a Suehle, J S a

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

b PURDUE UNIVERSITY (United States)

c FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING PROCESS; BAND OFFSETS; ELECTRON PHOTOEMISSION; ENERGY THRESHOLDS; HIGH TEMPERATURE; INTERFACIAL LAYER; INTERNAL PHOTOEMISSION; LOWER ENERGIES; POST DEPOSITION ANNEALING; SUBTHRESHOLD;

ALUMINUM; GALLIUM; INDIUM; PHOTOEMISSION; SPECTROSCOPIC ELLIPSOMETRY;

ANNEALING;

EID: 76449091085 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3306732 Document Type: Article

Times cited : (36)

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