Energy barriers at interfaces between (100) InxGa 1-xAs (0≤x≤0.53) and atomic-layer deposited Al 2O3 and HfO2

Applied Physics Letters

Volumn 94, Issue 20, 2009, Pages

  Afanas'ev, V V ^a   Stesmans, A ^a   Brammertz, G ^b   Delabie, A ^b   Sionke, S ^b   O'Mahony, A ^c   Povey, I M ^c   Pemble, M E ^c   O'Connor, E ^c   Hurley, P K ^c   Newcomb, S B ^d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d Glebe Scientific Ltd   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP NARROWING; DEPOSITED INSULATOR; ELECTRON BARRIER; ELECTRON ENERGY BAND; ELECTRON STATE; GAAS; INTERNAL PHOTOEMISSION; SEMICONDUCTOR CONDUCTION;

ATOMS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; OZONE WATER TREATMENT; PHOTOEMISSION;

ELECTRONS;

EID: 65949119128     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3137187     Document Type: Article

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