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Applied Physics Letters

Volumn 98, Issue 9, 2011, Pages

Improving the on-current of In0.7Ga0.3 As tunneling field-effect-transistors by p++/n+ tunneling junction

(6) Zhao, Han a Chen, Yen Ting a Wang, Yanzhen a Zhou, Fei a Xue, Fei a Lee, Jack C a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; DOPING CONCENTRATION; FIELD-EFFECT; GATE DIELECTRIC TUNNELING; ON-CURRENTS; SUBTHRESHOLD SWING; TUNNELING DIODES; TUNNELING JUNCTIONS;

GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INDIUM; TUNNEL DIODES;

FIELD EFFECT TRANSISTORS;

EID: 79952395772 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3559607 Document Type: Article

Times cited : (39)

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