Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 205-206

  Zhou, Guangle ^a   Lu, Y ^a   Li, R ^a   Zhang, Q ^a   Hwang, W ^a   Liu, Q ^a   Vasen, T ^a   Zhu, H ^b   Kuo, J ^b   Koswatta, S ^c   Kosel, T ^a   Wistey, M ^a   Fay, P ^a   Seabaugh, A ^a   Xing, Huili ^a  

^a University of Notre Dame   (United States)

^b IntelliEPI ^*  (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; EFFECTIVE MASS; II-IV SEMICONDUCTORS; LOW POWER APPLICATION; OFF-STATE LEAKAGE; SELF ALIGNED PROCESS; SUB-THRESHOLD SWING(SS); TUNNEL FIELDEFFECT TRANSISTOR (TFETS);

GALLIUM; HETEROJUNCTIONS;

FIELD EFFECT TRANSISTORS;

EID: 84880712219     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994499     Document Type: Conference Paper

References (6)

1. A. Seabaugh and Q. Zhang, Proc. IEEE, vol. 98, no. 12, p. 2095, 2010.
2. J. Knoch and J. Appenzeller, IEEE EDL., vol. 31, no. 4, p. 305,2010.
3. S. O. Koswatta et al., IEDM, pp. 909, 2009.
4. S. Mookerjea et al. IEDM, pp. 949, 2009.
5. D. Mohata, Appl. Phys. Express, 4 (2011) 024105.
6. H. Zhao et al,IEEE EDL, vol. 31, no. 12, p. 1392,2010.