Imaging of arsenic Cottrell atmospheres around silicon defects by three-dimensional atom probe tomography

Science

Volumn 317, Issue 5843, 2007, Pages 1370-1374

  Thompson, Keith ^a   Flaitz, Philip L ^b   Ronsheim, Paul ^b   Larson, David J ^a   Kelly, Thomas F ^a  

^a Imago Scientific Instruments   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; SILICON;

ARSENIC; PROBE; SILICON; TOMOGRAPHY;

ARTICLE; ATOM; ATOM PROBE TOMOGRAPHY; IMPLANTATION; NANODEVICE; PRIORITY JOURNAL; TOMOGRAPHY;

EID: 34548683658     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1145428     Document Type: Article

References (31)

1. P. M. Voyles, D. A. Muller, J. Grazul, P. H. Citrin, H.-J. Gossmann, Nature 416, 826 (2002).
2. P. M. Voyles, J. L. Grazul, D. A. Muller, Ultramicroscopy 96, 251 (2003).
3. M. R. Castell, D. A. Muller, P. Voyles, Nat. Mater. 2, 129 (2003).
4. P. G. Merli, F. Corticelli, V. Morandi, Appl. Phys. Lett. 81, 4535 (2002).
5. D. Hisamoto et al., IEEE Trans. Electron. Dev. 47, 2320 (2000).
6. A. Breed, K. P. Roenker, in 2003 International Semiconductor Device Research Symposium, Washington, DC, 10 to 13 December 2003 (IEEE, Piscataway, NJ), pp. 150-151.
7. L. Jinghong, K. S. Jones, Appl. Phys. Lett. 73, 3748 (1998).
8. R. Brindos, P. Keys, K. S. Jones, M. E. Law, Appl. Phys. Lett. 75, 229 (1999).
9. D. Basu, M. J. Gilbert, S. K. Banerjee, J. Vac. Sci. Technol. B 24, 2424 (2006).
10. X. Hebras et al., in Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, F. Roozeboom et al., Eds. (Electrochemical Society, Pennington, NJ, 2003), pp. 67-72.
11. A. Claverie et al., in Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, F. Roozeboom et al., Eds. (Electrochemical Society, Pennington, NJ, 2003), pp. 73-82.
12. H. Cottrell, B. A. Bilby, Proc. Phys. Soc. London Ser. A 62, 49 (1949).
13. E. W. Muller, J. A. Panitz, S. B. McLane, Rev. Sci. Instrum. 39, 83 (1968).
14. J. A. Panitz, Rev. Sci. Instrum. 44, 1034 (1973).
15. E. W. Muller, T. T. Tsong, Prog. Surf. Sci. 4, 1 (1973), figure 12.
16. G. L. Kellogg, T. T. Tsong, J. Appl. Phys. 51, 1184 (1980).
17. T. Sakata, Surf. Sci. 130, 313 (1983).
18. A. J. Melmed, Surf. Sci. 103, L139 (1981).
19. D. Blavette, E. Cadel, A. Fraczkiewicz, A. Menand, Science 286, 2317 (1999).
20. M. K. Miller, A. Cerezo, M. G. Hetherington, G. D. W. Smith, Eds., Atom Probe Field Ion Microscopy (Oxford Univ. Press, Oxford, 1996).
21. T. F. Kelly et al., Microsc. Microanal. 10, 373 (2004).
22. K. Thompson, J. H. Booske, D. J. Larson, T. F. Kelly, Appl. Phys. Lett. 87, 052108 (2005).
23. K. Thompson, J. H. Bunton, T. F. Kelly, D. J. Larson, J. Vac. Sci. Technol. B 24, 421 (2006).
24. T. F. Kelly, M. K. Miller, Rev. Sci. Instrum. 78, 031101 (2007).
25. T. F. Kelly et al., Annu. Rev. Mater. Res. 37, 681 (2007).
26. K. Thompson et al., Ultramicroscopy 107, 131 (2007).
27. K. Thompson, B. P. Gorman, D. J. Larson, B. van Leer, L. Hong, Microsc. Microanal. 12, 1736 (2006).
28. W. Vandervorst et al., Appl. Surf. Sci. 231, 618 (2004).
29. T. Janssens et al., J. Vac. Sci. Technol. 24, 399 (2005).
30. T. Aoki, S. Chiba, J. Matsuo, I. Yamada, J. P. Biersack, Nucl. Instrum. Methods Phys. Res. B 180, 312 (2001).
31. M. H. Yang, G. Mount, I. Mowat, J. Vac. Sci. Technol. B 24, 428 (2006).