Empirical characteristics and extraction of overall variations for 65-nm MOSFETs and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 88-89

  Kanno, Michihiro ^a   Shibuya, Akira ^a   Matsumura, Masao ^a   Tamura, Kazuhiro ^a   Tsuno, Hitoshi ^a   Mori, Shigetaka ^a   Fukuzaki, Yuzo ^a   Gocho, Tetsuo ^a   Ansai, Hisahiro ^a   Nagashima, Naoki ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRON BEAM LITHOGRAPHY; EXTRACTION; FIELD EFFECT TRANSISTORS; METAL RECOVERY; METALLIC COMPOUNDS; METALS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR MATERIALS; SMELTING;

65-NM NODES; MEAN VALUE (MV); METAL-OXIDE SEMICONDUCTOR (MOS); MOSFETS; RANDOM COMPONENTS; SCALING DOWN; SYSTEMATIC (CO); TEST ELEMENT GROUP (TEG); TOTAL VARIATION (TV); TRANSISTOR ARRAYS; VARIATIONS OF; VLSI TECHNOLOGIES;

TRANSISTORS;

EID: 44849137489     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339738     Document Type: Conference Paper

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