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Volumn 99, Issue 13, 2011, Pages

Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

(11) Takamizawa, H a Shimizu, Y a Inoue, K b Toyama, T a Okada, N c Kato, M c Uchida, H c Yano, F d Nishida, A d Mogami, T d Nagai, Y a

a TOHOKU UNIVERSITY (Japan)

b KYOTO UNIVERSITY (Japan)

c TOSHIBA CORPORATION (Japan)

d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANNEALING; ATOM PROBE TOMOGRAPHY; BORON ATOM; CHANNEL REGION; DOPANT FLUCTUATION; LASER-ASSISTED; LOCAL REGION; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; NMOSFET; P-TYPE; SILICON-BASED; SOURCE/DRAIN EXTENSION;

ATOMS; BORON; BORON COMPOUNDS; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ION BEAMS; ION IMPLANTATION; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

TRANSISTORS;

EID: 80053531563 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3644960 Document Type: Article

Times cited : (39)

References (29)

1
- 0000793139
- G. E. Moore, Electronics 38, 114 (1965).
- (1965) Electronics , vol.38 , pp. 114
- Moore, G.E.¹

2
- 80053519595
- International Technology Roadmafor Semiconductors 2009 Edition, Metrology and Design
- International Technology Roadmap for Semiconductors 2009 Edition, Metrology and Design, http://www.itrs.net/.

3
- 0028548950
- 10.1109/16.333844
- T. Mizuno, J. Okamura, and A. Toriumi, IEEE Trans. Electron Devices 41, 2216 (1994). 10.1109/16.333844
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 2216
- Mizuno, T.¹ Okamura, J.² Toriumi, A.³

4
- 0032164821
- 10.1109/16.711362
- P. A. Stolk, F. P. Widdershoven, and D. B. M. Klassen, IEEE Trans. Electron Devices 45, 1960 (1998). 10.1109/16.711362
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1960
- Stolk, P.A.¹ Widdershoven, F.P.² Klassen, D.B.M.³

5
- 0033169519
- 10.1109/16.777162
- A. Asenov and S. Saini, IEEE Trans. Electron Devices 46, 1718 (1999). 10.1109/16.777162
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1718
- Asenov, A.¹ Saini, S.²

6
- 22244484728
- Where do the dopants go?
- DOI 10.1126/science.1111104
- S. Roy and A. Asenov, Science 309, 388 (2005). 10.1126/science.1111104 (Pubitemid 40994668)
- (2005) Science , vol.309 , Issue.5733 , pp. 388-390
- Roy, S.¹ Asenov, A.²

7
- 48649087666
- 10.1109/IEDM.2007.4418975
- K. Takeuchi, T. Fukai, T. Tsunomura, A. T. Putra, A. Nishida, S. Kamohara, and T. Hiramoto, Tech. Dig. - Int. Electron Devices Meet. 467 (2007). 10.1109/IEDM.2007.4418975
- Tech. Dig. - Int. Electron Devices Meet. , vol.467 , pp. 2007
- Takeuchi, K.¹ Fukai, T.² Tsunomura, T.³ Putra, A.T.⁴ Nishida, A.⁵ Kamohara, S.⁶ Hiramoto, T.⁷

8
- 51949110702
- 10.1109/VLSIT.2008.4588600
- T. Tsunomura, A. Nishida, F. Yano, A. T. Putra, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto, and T. Mogami, Dig. Tech. Pap. - Symp. VLSI Technol. 156 (2008). 10.1109/VLSIT.2008.4588600
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.156 , pp. 2008
- Tsunomura, T.¹ Nishida, A.² Yano, F.³ Putra, A.T.⁴ Takeuchi, K.⁵ Inaba, S.⁶ Kamohara, S.⁷ Terada, K.⁸ Hiramoto, T.⁹ Mogami, T.¹⁰

9
- 0018979293
- Pulsed-laser atom-probe field-ion microscopy
- DOI 10.1063/1.327686
- G. L. Kellogg and T. T. Tsong, J. Appl. Phys. 51, 1184 (1980). 10.1063/1.327686 (Pubitemid 11423962)
- (1980) Journal of Applied Physics , vol.51 , Issue.2 , pp. 1184-1193
- Kellog, G.L.¹ Tsong, T.T.²

10
- 0003513853
- edited by M. K. Miller, A. Cerezo, M. G. Hetherington, and G. D. W. Smith (Oxford University Press, Oxford)
- Atom Probe Field Ion Microscopy, edited by, M. K. Miller, A. Cerezo, M. G. Hetherington, and, G. D. W. Smith, (Oxford University Press, Oxford, 1996).
- (1996) Atom Probe Field Ion Microscopy

11
- 0033579332
- Three-dimensional atomic-scale imaging of impurity segregation to line defects
- DOI 10.1126/science.286.5448.2317
- D. Blavette, E. Cadel, A. Fraczkiewicz, and A. Menand, Science 286, 2317 (1999). 10.1126/science.286.5448.2317 (Pubitemid 30016887)
- (1999) Science , vol.286 , Issue.5448 , pp. 2317-2319
- Blavette, D.¹ Cadel, E.² Fraczkiewicz, A.³ Menand, A.⁴

12
- 34047158735
- Invited review article: Atom probe tomography
- DOI 10.1063/1.2709758
- T. F. Kelly and M. K. Miller, Rev. Sci. Instrum. 78, 031101 (2007). 10.1063/1.2709758 (Pubitemid 46517307)
- (2007) Review of Scientific Instruments , vol.78 , Issue.3 , pp. 031101
- Kelly, T.F.¹ Miller, M.K.²

13
- 70350407462
- 10.1557/mrs2009.194
- D. N. Seidman and K. Stiller, MRS Bull. 34, 717 (2009). 10.1557/mrs2009.194
- (2009) MRS Bull. , vol.34 , pp. 717
- Seidman, D.N.¹ Stiller, K.²

14
- 34548683658
- Imaging of arsenic Cottrell atmospheres around silicon defects by three-dimensional atom probe tomography
- DOI 10.1126/science.1145428
- K. Thompson, P. L. Flaitz, P. Ronsheim, D. J. Larson, and T. F. Kelly, Science 317, 1370 (2007). 10.1126/science.1145428 (Pubitemid 47417473)
- (2007) Science , vol.317 , Issue.5843 , pp. 1370-1374
- Thompson, K.¹ Flaitz, P.L.² Ronsheim, P.³ Larson, D.J.⁴ Kelly, T.F.⁵

15
- 34548673474
- Atom probe tomography of electronic materials
- DOI 10.1146/annurev.matsci.37.052506.084239
- T. F. Kelly, D. J. Larson, K. Thompson, R. L. Alvis, J. H. Bunton, J. D. Olson, and B. P. Gorman, Annu. Rev. Mater. Res. 37, 681 (2007). 10.1146/annurev.matsci.37.052506.084239 (Pubitemid 47497660)
- (2007) Annual Review of Materials Research , vol.37 , pp. 681-727
- Kelly, T.E.¹ Larson, D.J.² Thompson, K.³ Alvis, R.L.⁴ Bunton, J.H.⁵ Olson, J.D.⁶ Gorman, B.R.⁷

16
- 85014423157
- L. J. Lauhon, P. Adusumilli, P. Ronsheim, P. L. Flaitz, and D. Lawrence, MRS Bull. 34, 738 (2009).
- (2009) MRS Bull. , vol.34 , pp. 738
- Lauhon, L.J.¹ Adusumilli, P.² Ronsheim, P.³ Flaitz, P.L.⁴ Lawrence, D.⁵

17
- 80052517388
- 10.1016/j.ultramic.2010.11.020
- K. Hono, T. Ohkubo, Y. M. Chen, M. Kodzuka, K. Oh-ishi, H. Sepehri-Amin, F. Li, T. Kinno, S. Tomiya, and Y. Kanitani, Ultramicroscopy 111, 576 (2011). 10.1016/j.ultramic.2010.11.020
- (2011) Ultramicroscopy , vol.111 , pp. 576
- Hono, K.¹ Ohkubo, T.² Chen, Y.M.³ Kodzuka, M.⁴ Oh-Ishi, K.⁵ Sepehri-Amin, H.⁶ Li, F.⁷ Kinno, T.⁸ Tomiya, S.⁹ Kanitani, Y.¹⁰

18
- 31544482788
- Characterization of ultralow-energy implants and towards the analysis of three-dimensional dopant distributions using three-dimensional atom-probe tomography
- DOI 10.1116/1.2141621
- K. Thompson, J. H. Bunton, T. F. Kelly, and D. J. Larson, J. Vac. Sci. Technol. B 24, 421 (2006). 10.1116/1.2141621 (Pubitemid 43164250)
- (2006) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.24 , Issue.1 , pp. 421-427
- Thompson, K.¹ Bunton, J.H.² Kelly, T.F.³ Larson, D.J.⁴

19
- 40849097878
- Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique
- DOI 10.1063/1.2891081
- K. Inoue, F. Yano, A. Nishida, T. Tsunomura, T. Toyama, Y. Nagai, and M. Hasegawa, Appl. Phys. Lett. 92, 103506 (2008). 10.1063/1.2891081 (Pubitemid 351394014)
- (2008) Applied Physics Letters , vol.92 , Issue.10 , pp. 103506
- Inoue, K.¹ Yano, F.² Nishida, A.³ Tsunomura, T.⁴ Toyama, T.⁵ Nagai, Y.⁶ Hasegawa, M.⁷

20
- 68249107039
- 10.1063/1.3186788
- K. Inoue, F. Yano, A. Nishida, H. Takamizawa, T. Tsunomura, Y. Nagai, and M. Hasegawa, Appl. Phys. Lett. 95, 043502 (2009). 10.1063/1.3186788
- (2009) Appl. Phys. Lett. , vol.95 , pp. 043502
- Inoue, K.¹ Yano, F.² Nishida, A.³ Takamizawa, H.⁴ Tsunomura, T.⁵ Nagai, Y.⁶ Hasegawa, M.⁷

21
- 70349967732
- 10.1016/j.ultramic.2009.08.002
- K. Inoue, F. Yano, A. Nishida, H. Takamizawa, T. Tsunomura, Y. Nagai, and M. Hasegawa, Ultramicroscopy 109, 1479 (2009). 10.1016/j.ultramic.2009.08.002
- (2009) Ultramicroscopy , vol.109 , pp. 1479
- Inoue, K.¹ Yano, F.² Nishida, A.³ Takamizawa, H.⁴ Tsunomura, T.⁵ Nagai, Y.⁶ Hasegawa, M.⁷

22
- 79959329747
- 10.1063/1.3597303
- Y. Shimizu, H. Takamizawa, K. Inoue, T. Toyama, Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, and T. Mogami, Appl. Phys. Lett. 98, 232101 (2011). 10.1063/1.3597303
- (2011) Appl. Phys. Lett. , vol.98 , pp. 232101
- Shimizu, Y.¹ Takamizawa, H.² Inoue, K.³ Toyama, T.⁴ Nagai, Y.⁵ Okada, N.⁶ Kato, M.⁷ Uchida, H.⁸ Yano, F.⁹ Tsunomura, T.¹⁰ Nishida, A.¹¹ Mogami, T.¹²

23
- 13444273231
- Strategies for fabricating atom probe specimens with a dual beam FIB
- DOI 10.1016/j.ultramic.2004.10.011, PII S0304399104001949
- M. K. Miller, K. F. Russel, and G. B. Thompson, Ultramicroscopy 102, 287 (2005). 10.1016/j.ultramic.2004.10.011 (Pubitemid 40203131)
- (2005) Ultramicroscopy , vol.102 , Issue.4 , pp. 287-298
- Miller, M.K.¹ Russell, K.F.² Thompson, G.B.³

24
- 36248947322
- Review of atom probe FIB-based specimen preparation methods
- DOI 10.1017/S1431927607070845, PII S1431927607070845
- M. K. Miller, K. F. Russell, K. Thompson, R. Alvis, and D. J. Larson, Microsc. Microanal. 13, 428 (2007). 10.1017/S1431927607070845 (Pubitemid 350126554)
- (2007) Microscopy and Microanalysis , vol.13 , Issue.6 , pp. 428-436
- Miller, M.K.¹ Russell, K.F.² Thompson, K.³ Alvis, R.⁴ Larson, D.J.⁵

25
- 79952511381
- 10.1143/APEX.4.036601
- H. Takamizawa, K. Inoue, Y. Shimizu, T. Toyama, F. Yano, T. Tsunomura, A. Nishida, T. Mogami, and Y. Nagai, Appl. Phys. Express 4, 036601 (2011). 10.1143/APEX.4.036601
- (2011) Appl. Phys. Express , vol.4 , pp. 036601
- Takamizawa, H.¹ Inoue, K.² Shimizu, Y.³ Toyama, T.⁴ Yano, F.⁵ Tsunomura, T.⁶ Nishida, A.⁷ Mogami, T.⁸ Nagai, Y.⁹

26
- 80053518983
- T. Tsunomura, A. Nishida, F. Yano, A. T. Putra, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Mama, T. Hiramoto, and T. Mogami, Dig. Tech. Pap. - Symp. VLSI Technol. 110 (2009).
- Dig. Tech. Pap. - Symp. VLSI Technol. , vol.110 , pp. 2009
- Tsunomura, T.¹ Nishida, A.² Yano, F.³ Putra, A.T.⁴ Takeuchi, K.⁵ Inaba, S.⁶ Kamohara, S.⁷ Terada, K.⁸ Mama, T.⁹ Hiramoto, T.¹⁰ Mogami, T.¹¹

27
- 0022061598
- 10.1007/BF00617863
- T. Y. Tan and U. Gsele, Appl. Phys. A 37, 1 (1985). 10.1007/BF00617863
- (1985) Appl. Phys. A , vol.37 , pp. 1
- Tan, T.Y.¹ Gsele, U.²

28
- 21544480068
- 10.1063/1.112725
- D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994). 10.1063/1.112725
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2305
- Eaglesham, D.J.¹ Stolk, P.A.² Gossmann, H.-J.³ Poate, J.M.⁴

29
- 0005346036
- 10.1063/1.364452
- P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997). 10.1063/1.364452
- (1997) J. Appl. Phys. , vol.81 , pp. 6031
- Stolk, P.A.¹ Gossmann, H.-J.² Eaglesham, D.J.³ Jacobson, D.C.⁴ Rafferty, C.S.⁵ Gilmer, G.H.⁶ Jaraz, M.⁷ Poate, J.M.⁸ Luftman, H.S.⁹ Haynes, T.E.¹⁰

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