Atom-probe for FinFET dopant characterization

Ultramicroscopy

Volumn 111, Issue 6, 2011, Pages 535-539

  Kambham, A K ^a,b   Mody, J ^a,b   Gilber, M ^a,b   Koelling, S ^a,b   Vandervorst, W ^a,b  

^a KU LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

Atom probe tomography; Conformality; FinFET; SIMS

Indexed keywords

ATOMS; DOPING (ADDITIVES); FINS (HEAT EXCHANGE); MASS SPECTROMETRY; MOSFET DEVICES; PROBES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; TRANSISTORS;

ALTERNATIVE SOLUTIONS; ATOM PROBE TOMOGRAPHY; CONFORMALITY; DOPANT DISTRIBUTION; QUANTITATIVE COMPARISON; SOURCE/DRAIN REGIONS; THEORETICAL MODELING; TRANSISTOR ARCHITECTURE;

FINFET;

SILICON;

ANALYTICAL PARAMETERS; ARTICLE; ATOM; ATOM PROBE TOMOGRAPHY; CONTROLLED STUDY; FIELD EFFECT TRANSISTOR; INTERMETHOD COMPARISON; MASS SPECTROMETRY; MOLECULAR PROBE; QUANTITATIVE ANALYSIS; SEMICONDUCTOR; THEORETICAL MODEL; TOMOGRAPHY;

EID: 80052525195     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2011.01.017     Document Type: Article

References (22)

1. D. Hisamoto, W. Lee, J. Kedzierski, E. Anderson, H. Takeuchi, K. Asano, T. King, J. Bokor, C. Hu, Tech. Dig.-Int. Electron Devices Meet (1998) 1032.
2. D. Lenoble, et al., Dig. Tech. Pap.-Symp. VLSI Technol. (2006) 168.
3. R. Duffy, G. Curatola, B.J. Pawlak, G. Doornbos, K. Van der Tak, P. Breimer, J.G.M. Van Berkum, F. Roozeboom, J. Vac. Sci. Technol. B 26 (2008) 402.
4. H. Gossmann, A. Agarwal, T. Parrill, L Rubin, J. Poate, IEEE Trans. Nanotechnol. 2 (2003) 285.
5. J. Mody, P. Eyben, W. Polspoel, M. Jurczak, W. Vandervorst, Doping engineering for front-end processing, in: B.J. Pawlak, M.L Pelaz, M. Law, K. Suguro (Eds.) MRS Symposia Proceedings no. 1070, Materials Research Society, Warrendale, PA, 2008, Paper No. 1070-E01-11.
6. D. Blavette, B. Deconihout, A. Bostel, J.M. Sarrau, M. Bouet, A. Menand, Rev. Sci. Instrum. 64 (1993) 2911.
7. M. Miller, A. Cerezo, M. Hetherington, G. Smith, Atom Probe Field Ion Microscopy, 1996.
8. R.G. Forbes, Field evaporation theory: a review of basic ideas, Appl. Surf. Sci. 1 (1995)87-88.
9. J.S. Moore, K.S. Jones, H. Kennel, S. Corcoran, Ultramicroscopy 108 (2008) 536.
10. L Lauhon, et al., MRS Bull. 34 (2009) 738.
11. Kirk E. C.G., D.A. Williams, H. Ahmed, Inst. Phys. Conf. Ser. 100 (1989) 501.
12. M.K. Miller, K.F. Russell, G.B. Thompson, Ultramicroscopy 102 (2005) 287-298.
13. Miller, et al., Microsc. Microanal. 13 (6) (2007) 428.
14. K. Thompson, et al., Ultramicroscopy 107 (2-3) (2006) 131.
15. M.K. Miller, K.F. Russell, Microsc. Microanal. 12 (2) (2006) 1294CD.
16. M.K. Miller, K.F. Russell, Ultramicroscopy 107 (2007) 761.
17. L Renaud, P. Monsallut, P. Benard, P. Saliot, G.D. Costa, F. Vurpillot, B. Deconihout, The new laser assisted wide angle tomographic atom probe, Microsc. Microanal. Chicago 12 (2006) 1726-1727.
18. K. Thompson, et al., Microsc. Microanal. 12 (suppl. 2) (2006) 1736.
19. W. Vandervorst, M. Jurczak, J. Everaert, B.J. Pawlak, R. Duffy, J. Del-Agua-Bomiquel, T. Poon, J. Vac. Sci. Technol. B 26 (2008) 396.
20. D. Kriiger, J. Dabrowski, P. Gaworzewski, R. Kurps, K. Pomplun, J. Appl. Phys. 90(2001)3578.
21. M. Miller, A. Cerezo, M.G. Hetherington, G.D.W. Smith, Atom Probe Field Ion Microscopy, Oxford, New York, Clarendon Press; Oxford University Press, 1996.
22. J. Mody, R. Duffy, P. Eyben, J. Goossens, A. Moussa, W. Polspoel, B. Berghmans, M.J.H. van Dal, B.J. Pawlak, M. Kaiser, R.G.R. Weemaes, W. Vandervorst, J. Vac. Sci. Technol. B, AVS (2010), pp. C1H5-C1H13.